Wafer processing method and wafer processing apparatus
A processing method and technology of processing equipment, which are applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as defective processing equipment, wafer cracks, and inability to obtain processing results, and achieve the effect of preventing wrong selection.
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[0023] An embodiment of one embodiment of the present invention will be described with reference to the drawings. First, the wafer 1 and the like to be processed will be described. The wafer 1 is a substantially disk-shaped substrate, and is formed of materials such as silicon, SiC (silicon carbide), GaN (gallium nitride), and other semiconductor materials. In addition, the wafer 1 may also be formed of materials such as sapphire, glass, and quartz.
[0024] figure 1 (A) is a perspective view of the wafer 1 etc., figure 1 (B) is a plan view of the wafer 1 and the like. On the front surface 1a of the wafer 1, a plurality of planned dividing lines 3 called streets are set and intersect each other.
[0025] Devices 5 such as ICs and LSIs are formed in each region divided by a plurality of dividing lines 3 . On the outer peripheral portion of the wafer 1, a notch-shaped mark 1c called a notch indicating the crystal orientation of the wafer 1 is formed. However, the mark 1c i...
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