Method for removing photoresist

A photoresist and wet degumming technology, used in optics, optomechanical equipment, photosensitive material processing, etc., can solve problems such as difficult to meet, surface damage of semiconductor materials, etc., and achieve the effect of fast and effective removal

Pending Publication Date: 2021-12-17
苏州长瑞光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoresist removal effect of the existing plasma deglue process is still difficult to be satisfied; on the other hand, the plasma will cause damage to the surface of the semiconductor material. The charge damage caused by the process is becoming more and more unacceptable

Method used

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  • Method for removing photoresist
  • Method for removing photoresist
  • Method for removing photoresist

Examples

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Embodiment Construction

[0019] The existing plasma deglue process uses oxygen, water vapor, carbon dioxide and other oxygen-containing gases as the working gas to excite it to generate plasma and collide with the photoresist layer to produce volatile reactants to realize the removal of the photoresist layer. Purpose. However, the photoresist removal effect of the existing plasma deglue process is still difficult to be satisfied; on the other hand, the plasma will cause damage to the surface of the semiconductor material. The charge damage caused by the battery is becoming more and more unacceptable.

[0020] In order to solve this problem, the idea of ​​the present invention is to adopt the SF within 20% 6 As an auxiliary gas in the plasma degumming process, it removes charged particles in the generated plasma.

[0021] In order to improve the removal rate of photoresist, the prior art often adds H to the working gas 2 、CH 4 , NH 3 and other auxiliary gases, among which the most commonly used an...

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Abstract

The invention discloses a method for removing photoresist. The method comprises a plasma photoresist removing step, wherein the plasma photoresist removing step specifically comprises: exciting mixed gas of O2 and SF6 into plasma, and removing charged particles in the plasma, wherein the volume ratio of the SF6 in the mixed gas is less than 20%; and carrying out a reaction on the generated electrically neutral particles and a photoresist to remove the photoresist. According to the invention, less than 20% of SF6 is adopted as an auxiliary gas in a plasma photoresist removing process, and charged particles in the generated plasma are removed, so that the generated neutral particles do not cause charge damage to a semiconductor, organic stains on photoresist and a wafer can be quickly and effectively removed, and the removal efficiency of the photoresist is far higher than that of the conventional combination of oxygen and carbon fluoride auxiliary gas.

Description

technical field [0001] The invention relates to a method for removing photoresist, belonging to the technical field of semiconductor manufacturing. Background technique [0002] In the field of semiconductor manufacturing technology, it is often necessary to pattern and etch on the semiconductor substrate to form holes or grooves. The pattern is transferred to the photoresist, and then the pattern is transferred to the wafer surface by etching technology. In this process, the photoresist can be used as a mask to cover the area outside the etched area, protecting the etched material, etc. After the etching is completed, the photoresist coated on the surface of the semiconductor wafer needs to be removed. [0003] In many process situations, the photoresist is difficult to remove due to the influence of the pre-process. For example, the photoresist mask during ion implantation will have a layer of hard-to-remove plastic shell on the edge after ion bombardment, and the photore...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/42G03F7/427
Inventor 唐家乐张玉乾严磊陆嘉鑫
Owner 苏州长瑞光电有限公司
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