Method and system for monitoring deposition process
A deposition process and electronic technology, applied in the direction of measuring devices, semiconductor/solid-state device testing/measurement, material analysis by measuring secondary emissions, etc., can solve problems such as use, inability to provide real-time monitoring of the process, and tools that cannot be used slowly
Pending Publication Date: 2021-12-21
NOVA MEASURING INSTR LTD
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
These tools are too slow to be used in a production environment and cannot provide real-time monitoring of the process to indicate process excursions or failures in a commercial manufacturing environment
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] Embodiments of the deposition process process control and monitoring of the present invention will now be described with reference to the accompanying drawings. Different embodiments, or combinations thereof, can be used for different applications or achieve different benefits. Depending on the result sought to be achieved, the different features disclosed herein may be used in part or in their most complete form, alone or in combination with other features, taking advantage of the balance of requirements and constraints. Accordingly, certain benefits will be highlighted with reference to different embodiments, but not limited to the disclosed embodiments. That is, the features disclosed herein are not limited to the embodiments in which they are described, but can be "mixed and matched" with other features and introduced into other embodiments.
[0024] figure 1 The diagram illustrates a cross-section of a portion of a semiconductor wafer showing a deposition process...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.
Description
[0001] related application [0002] This application claims the benefit of priority to U.S. Provisional Application No. 62 / 817,492, filed March 12, 2019, the entire contents of which are incorporated herein by reference. technical field [0003] The present disclosure relates generally to the field of process control and monitoring in the field of semiconductor manufacturing. The disclosed process control techniques are particularly useful for monitoring selective deposition processes. Background technique [0004] For decades, the semiconductor industry has relied on photolithography to generate the patterning needed for chip circuits. Photolithography enables the deposition of each layer across the wafer, which is then patterned to form circuits. In addition to adding many steps and cost to the chip manufacturing process, current nanoscale features make photolithography extremely difficult, and perhaps even impossible in some cases. Furthermore, double and multiple patt...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/085G01B11/06G01N23/22G01N23/223G01N23/2273G01N23/02G01N23/083G01B15/00G01B15/02G01B11/00
CPCG01B15/02H01L22/12G01N23/2273G01N2223/085G01N2223/303G01N2223/61G01N2223/633
Inventor 希思·A·波伊什拉克西米·瓦拉德斯里尼瓦桑·兰加拉詹
Owner NOVA MEASURING INSTR LTD