Manufacturing method of groove type IGBT (Insulated Gate Bipolar Translator) device and groove type IGBT device
A manufacturing method and trench-type technology, applied in the manufacture method of trench-type IGBT devices, in the field of trench-type IGBT devices, can solve the problem of height difference between active region and terminal region, substrate surface unevenness, contact holes and trenches Solve problems such as the alignment deviation of the groove grid, and achieve the effect of optimizing the alignment effect, smoothing the surface, and reducing the height difference
Pending Publication Date: 2022-01-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0004] However, in the manufacturing process of trench type IGBT devices, due to the field plate structure formed in the terminal area, there is a height difference between the active area and the terminal area, and the substrate surface is uneven, which is easy to cause the contact hole and the trench gate. quasi-bias problem
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[0046] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0047] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
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The invention discloses a manufacturing method of a groove type IGBT device, and relates to the field of semiconductor manufacturing. The manufacturing method of the groove type IGBT device comprises the following steps: forming a field limiting ring in a substrate corresponding to an IGBT terminal area; forming field oxide in the substrate corresponding to the IGBT terminal area; forming a trench field plate in the substrate corresponding to the terminal region, wherein a field limiting ring is arranged between the trench field plate and the IGBT active region; forming a dielectric layer on the surface of the substrate; and manufacturing a contact hole and a front metal layer on the front surface of the substrate. The problem that alignment deviation is prone to occurring between a contact hole and a trench gate in the manufacturing process of an existing small-cell-size trench type IGBT device is solved. The effects of optimizing the alignment effect of the contact hole and the trench gate and improving the performance of the small-cell-size trench type IGBT device are achieved.
Description
technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a trench-type IGBT device and a trench-type IGBT device. Background technique [0002] IGBT devices are one of the important switching components for energy control and conversion in power electronic systems, and are widely used in industrial control, new energy vehicles, frequency conversion appliances, smart grids and other fields. [0003] An IGBT device includes an active region and a termination region surrounding the active region. The terminal area is provided with a terminal structure, which is used to block the lateral voltage of the device. At present, the terminal structure in the IGBT device mainly adopts field plate and field limiting ring technology. [0004] However, in the manufacturing process of trench type IGBT devices, due to the field plate structure formed in the terminal area, there is a height difference betw...
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IPC IPC(8): H01L21/331H01L29/739H01L29/40
CPCH01L29/66348H01L29/7397H01L29/404H01L29/407
Inventor 潘嘉张同博姚一平杨继业邢军军陈冲黄璇孙鹏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP