Unlock instant, AI-driven research and patent intelligence for your innovation.

Defect detection method and system

A defect detection and to-be-detected technology, applied in optical testing flaws/defects, measuring devices, material analysis by optical means, etc., can solve problems such as circuit fabrication failures, reduce noise interference, and improve detection efficiency.

Pending Publication Date: 2022-01-11
ICLEAGUE TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the defects generated in any step may lead to the failure of circuit fabrication

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Defect detection method and system
  • Defect detection method and system
  • Defect detection method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] As mentioned in the background, there are still many problems in the defect detection process in the prior art. The following will describe in detail in conjunction with the accompanying drawings.

[0049] Figure 1 to Figure 4 It is a structural schematic diagram of each step of a defect detection method.

[0050] Please refer to figure 1 , providing a wafer 100 to be inspected, the wafer 100 to be inspected has a plurality of chips to be inspected, and the plurality of chips to be inspected include: a first adjacent chip to be inspected 101 arranged along a first direction X, a second The chip to be tested 102 and the third chip to be tested 103 .

[0051] Please refer to figure 2 , acquire the first image to be inspected 101a of the first chip to be inspected 101, the first image to be inspected 101a has several first pixel values ​​to be inspected; obtain the second image to be inspected 102a of the second chip to be inspected 102, the said The second image to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a defect detection method and system, and the method comprises the steps: providing a plurality of historical wafers which comprise a plurality of historical chips; obtaining a reference image according to the plurality of historical chips; providing a to-be-detected wafer, wherein the to-be-detected wafer comprises a plurality of to-be-detected chip; obtaining a to-be-detected image of each to-be-detected chip; comparing the to-be-detected image with the reference image to obtain a pixel deviation absolute value between the images; and comparing the pixel deviation insulation value with a pixel detection threshold value, and judging whether a to-be-detected chip corresponding to the to-be-detected image has defects or not. A reference image is obtained according to a plurality of historical chips, the reference image can serve as a standard image without defects, and when the image to be detected is compared with the reference image, if defects exist, it can be directly judged that defects exist in the to-be-detected chip corresponding to the to-be-detected image. Besides, for the incomplete to-be-detected chip, only the part with the to-be-detected pixel value is compared with the reference image, so that the noise interference is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a defect detection method and system. Background technique [0002] Through mass production of semiconductor integrated circuit chips, a large number of various types of semiconductor devices will be formed on the same substrate and connected to each other to have complete electronic functions. Wherein, defects generated in any step may lead to failure of circuit fabrication. Therefore, in the manufacturing process, it is often necessary to perform defect detection and analysis on the manufacturing structure of each step of the process to find out the cause of the defect and eliminate it. However, with the rapid development of ultra-large-scale integrated circuits (ULSI, Ultra LargeScale Integration), the integration of chips is getting higher and higher, and the size of devices is getting smaller and smaller. The size of the defect is getting smaller and sm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/95
CPCG01N21/9501
Inventor 邢程李丰阳
Owner ICLEAGUE TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com