Semiconductor process equipment and edge protection mechanism thereof
A technology of edge protection and process equipment, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problem that the wafer etching shape is prone to tilt, etc., to increase the speed, avoid or reduce the effect of tilt
Pending Publication Date: 2022-01-11
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF19 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The invention discloses a semiconductor process equipment and its edge protection mechanism to solve the problem that the etched topography on the wafer is prone to tilt
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] In order to make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0026] Combine the following Figure 1 to Figure 7 , the technical solutions disclosed in the various embodiments of the present invention are described in detail.
[0027] refer to Figure 1 to Figure 5 , the edge protection mechanism for semiconductor process equipment disclosed in this application includes a focus ring 100 and an edge protection ring 200, the focu...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
| width | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses semiconductor process equipment and an edge protection mechanism thereof, which relate to the technical field of semiconductor process equipment. The edge protection mechanism comprises a focusing ring and an edge protection ring, and the focusing ring and the edge protection ring are arranged in a stacked mode. A first gap is formed between the focusing ring and the edge protection ring. The semiconductor process equipment comprises an electrostatic chuck, the electrostatic chuck is used for placing a wafer, and the focusing ring is arranged around the electrostatic chuck. The edge protection ring is provided with an edge protection part, the edge protection part is stacked on the edge of the wafer, and a second gap is formed between the edge protection part and the wafer. The first gap is provided with a first flow guide section, the first flow guide section is connected with the second gap, the first flow guide section is provided with a guide face, the guide face is a part of the bottom face of the edge protection ring or the top face of the focusing ring, and the guide face inclines towards the overlapping direction of the focusing ring and the edge protection ring in the direction away from the electrostatic chuck. According to the scheme, the problem that the etching morphology on the wafer is prone to inclination can be solved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor process equipment and an edge protection mechanism thereof. Background technique [0002] During the processing of the wafer, it is necessary to apply a patterned photoresist on the wafer to protect the parts of the wafer that do not need to be etched by the photoresist. However, the photoresist applied to the edge of the wafer is prone to warping. In addition, it is necessary to remove the photoresist on the edge of the wafer through an edge cleaning process, resulting in a situation where no photoresist occurs at the edge of the wafer. [0003] In the related art, by adding an edge protection mechanism, the edge part of the wafer is shielded by the edge protection mechanism, so as to achieve the purpose of protecting the edge of the wafer. However, the edge protection mechanism in the related art distorts the electric field, flow field and ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32385H01J37/32642H01J37/32449
Inventor 王德志陈景春
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD