Illuminating device with blue light reducing microstructure
A lighting device and microstructure technology, applied in the direction of lighting devices, lighting device components, lighting and heating equipment, etc., can solve problems such as not satisfying the anti-blue light effect, and achieve the effect of improving the effect of reducing blue light
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Embodiment 1
[0029] Embodiment 1: The first lighting device 7 includes an aluminum substrate 1 , an LED white light chip 2 and a glass substrate 3 arranged vertically and horizontally apart.
[0030] The distance between the aluminum substrate 1 and the glass substrate 3 is 10 cm, the side of the aluminum substrate 1 close to the glass substrate 3 is the absorbing surface, and the white LED chips 2 are arranged on the absorbing surface of the aluminum substrate 1 at intervals.
[0031] A PMMA substrate 4 is arranged on the side of the glass substrate 3 away from the aluminum substrate 1 , and the aluminum substrate 1 , glass substrate 3 and PMMA substrate 4 are fixed into an integral structure by a frame 5 .
Embodiment 2
[0032] Embodiment 2: The second lighting device 8, on the basis of the first lighting device, a titanium oxide coating 62 with a thickness of 300 microns is added. The titanium oxide coating 62 is prepared by a sol-gel method, and the titanium oxide coating 62 is wrapped The LED white light chip 2 is laid on the absorbing surface, and the thickness of the titanium oxide coating 62 is smaller than the height of the LED white light chip 2 .
Embodiment 3
[0033] Embodiment 3: The third illuminating device 9, on the basis of the second illuminating device, a first silicon oxide film 611 and a first titanium oxide film 612 prepared by magnetron sputtering are added, wherein the first silicon oxide film 611 The thickness is 600nm, the refractive index is 1.43, the thickness of the first titanium oxide film 612 is 50nm, the refractive index is 2.4, and the first silicon oxide film 611 is laid on the glass substrate 3, the first titanium oxide film 612 is laid on the first oxide on the bottom surface of the silicon thin film 611.
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