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Method and device for improving NOR Flash data read-write reliability and application thereof

A technology of data reading and writing and reliability, applied in the field of memory, to achieve the effect of fast operation, correctness and high efficiency, and simple structure

Pending Publication Date: 2022-02-01
HEFEI HENGSHUO SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a method, device and application for improving the reliability of NOR Flash data reading and writing, which effectively solves the problem of memory unit data reading errors that may occur after accidental power failure during the erasing process. problems, effectively improving the reliability of Flash data reading

Method used

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  • Method and device for improving NOR Flash data read-write reliability and application thereof
  • Method and device for improving NOR Flash data read-write reliability and application thereof
  • Method and device for improving NOR Flash data read-write reliability and application thereof

Examples

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Embodiment 1

[0045] Such as Figure 1-6 As shown, the present embodiment provides a method for improving the reliability of NOR Flash data reading and writing. It should be noted that in this embodiment, the same steps and parameters as in the prior art will not be described too much. Personnel can choose by themselves according to needs, and in this embodiment, only the content of the adjustment and innovative design of the present invention is introduced in detail;

[0046] Please refer to figure 2 , image 3 and Figure 6 , a method for improving NOR Flash data reading and writing reliability in this embodiment, including:

[0047] Match each physical block array in the NOR Flash storage area and add an abnormal indication module, the abnormal indication module includes an extra bit line and some indication storage units connected with the extra bit line; wherein the extra bit line and the indication storage unit are matched according to The bit lines and memory cells in the physic...

Embodiment 2

[0062] Please refer to figure 2 and image 3 , the present implementation provides a kind of device that improves NOR Flash data reading and writing reliability, comprises NOR Flash storage circuit, and NOR Flash storage circuit comprises some physical block arrays, and physical block array matching is provided with abnormal indication module, and described abnormal indication module comprises a An additional bit line and a number of indicating memory cells connected to the additional bit line, such as figure 2 Extra bit line BLR 1 The indicated memory cells Cell-R1 and Cell-R2 are connected according to the equivalent configuration of bit lines and memory cells in the matched physical block array.

[0063] In this embodiment, the abnormal indication module is set and configured to match the physical block array to perform the following operations:

[0064] When performing erasing, over-erasing repair, weak writing and verifying operations on the selected erasing block in...

Embodiment 3

[0071] The present embodiment provides a kind of Nor flash memory circuit, comprises the device that improves NOR Flash data reading and writing reliability as described in embodiment 2, and described device is set to carry out according to preset program and comprises the improvement as described in embodiment 1 A method for reading and writing reliability of NORFlash data.

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Abstract

The invention relates to the technical field of memories, and discloses a method and device for improving NOR Flash data read-write reliability and application thereof. The method comprises the steps that: a physical block array is matched, abnormal indication modules are additionally arranged, and when erasure, over-erasure repair, weak write-in and verification operations are sequentially carried out on a selected erasure block, the same operation is synchronously executed on an indication storage unit, the write-in operation and the write-in verification operation are continuously executed, when the NOR Flash is re-electrified, the verification operation on each abnormal indication module is executed, and the corresponding operation is executed according to the verification structure. According to the invention, the problem of data misreading of a storage unit caused by electric leakage of a bit line in a same physical block due to over-erasing of the storage unit when the storage unit is re-electrified to read data after accidental power failure in the erasing process can be effectively solved, and the reliability of Flash data reading is effectively improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method, device and application for improving the reliability of NOR Flash data reading and writing. Background technique [0002] With the development of semiconductor technology, flash memory has been widely used as a non-volatile memory. The flash memory adds a floating gate and a tunnel oxide layer on the basis of the traditional MOS transistor structure, and uses the floating gate to store charges so as to realize the non-volatility of the stored content. [0003] NOR FLASH is a non-volatile flash memory chip, and its erasing process is to pre-write all the bits in the target erasing block to 0, and then perform the erasing operation on the target erasing block. After the erasing is completed, operations such as erasure repair, weak write and verification, and weak block repair are performed. This series of operations forms a complete erasing process, the process is as fol...

Claims

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Application Information

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IPC IPC(8): G11C16/34
CPCG11C16/3445G11C16/345G11C16/3404
Inventor 周瑞任军盛荣华吕向东
Owner HEFEI HENGSHUO SEMICON CO LTD
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