Silicon carbide grinding device and method
A grinding method and silicon carbide technology, which are applied in grinding devices, chemical instruments and methods, grinding/polishing safety devices, etc., can solve the problems of reducing the grinding quality of wafers, failing to cool the wafers, increasing wafer damage, etc., and achieving enhanced cleaning. Cooling effect, improving quality, enhancing the effect of cooling effect
Inactive Publication Date: 2022-02-08
浙江晶越半导体有限公司
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Problems solved by technology
Since the actual contact area between the wafer and the grinding disc is a quarter of the grinding disc, but the cooling water discharge holes are evenly distributed on the grinding disc, the remaining three-quarters of the wafer cannot be effectively cooled, and water resources is also a waste
And because a large amount of silicon carbide powder and grinding disc shedding will be produced during the wafer grinding process, when the grinding parts of the wafer are not cleaned in time, the generated silicon carbide powder and grinding disc shedding will easily scratch the wafer surface, increasing the wafer damage
Reduced grinding quality of wafers
Method used
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Embodiment Construction
[0032] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0033] figure 1 It is a schematic diagram of a grinding device structure, including a rotary table 3 and a worktable 4; the rotary table 3 is integrally arranged in the center of the worktable 4; the worktable 4 is fixedly equipped with a gear bar 101; the rotary table 3 is ground through a threaded connection Disc 2; the angle formed by the gear rod 101 and the grinding disc 2, the angle is used to place the vacuum adsorption disc 1; the rotary table 3 is driven by a driving device (not shown in the figure) during the grinding process; the rotary table 3 rotates The grinding disc 2 is driven to rotate; the area where the adsorption disc and the grinding disc contact is called the grinding area, and the non-contact area is called the non-grinding area.
[0034] figure 2 It is a structural schematic diagram of the cleaning and cooling device, including a fi...
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The invention relates to the technical field of chemical mechanical grinding, and in particular, relates to a silicon carbide grinding device and method, wherein the grinding device comprises a work table, a rotating table, a grinding disc, an adsorption disc, a first cleaning and cooling device and a first cleaning and drying device; the rotating table is arranged on the work table; the grinding disc is arranged on the rotating table; the adsorption disc is arranged on the grinding disc; the first cleaning and cooling device is arranged on the work table and used for cleaning and cooling a grinding area of the contact part of the grinding disc and the vacuum adsorption disc; and the first cleaning and drying device can be movably arranged on the work table so as to clean and dry the back surface of a ground wafer. According to the first cleaning device, the cleaning and cooling effects of the grinding area are effectively enhanced, meanwhile, waste of water resources is reduced, and cleaning is carried out while the silicon carbide wafer is ground.
Description
technical field [0001] The invention relates to the technical field of chemical mechanical grinding, in particular to a silicon carbide grinding device and method. Background technique [0002] In the manufacturing process of the silicon carbide substrate, chemical mechanical polishing (CMP) equipment is often used to planarize the wafer surface. When the CMP equipment is performing planarization, the polishing liquid is supplied to the polishing pad. The wafer is contacted with the surface of the polishing pad by the pressure of the polishing head. [0003] The existing silicon carbide wafer grinding parts cannot be cleaned while the wafer is being ground. In addition, during the grinding process, cooling water is sprayed from the edge of the grinding disc to cool the grinding area and take away the powder produced by grinding. Since the actual contact area between the wafer and the grinding disc is a quarter of the grinding disc, but the cooling water discharge holes are ...
Claims
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IPC IPC(8): B24B37/10B24B37/34B24B55/03B24B1/00B08B3/02
CPCB24B37/10B24B37/34B24B55/03B24B1/00B08B3/02
Inventor 王越波高冰
Owner 浙江晶越半导体有限公司