Check patentability & draft patents in minutes with Patsnap Eureka AI!

Combined contact structure and novel GaN HEMT device

A contact structure and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of floating p-GaN "effect, high gate leakage, etc., to reduce gate leakage and eliminate floating p-GaN" effect Effect

Pending Publication Date: 2022-02-11
JIANGSU CORENERGY SEMICON CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But existing enhancement-mode GaN HEMT devices suffer from high gate leakage or the "floating p-GaN" effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Combined contact structure and novel GaN HEMT device
  • Combined contact structure and novel GaN HEMT device
  • Combined contact structure and novel GaN HEMT device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Based on the above defects, the present invention provides a combined contact structure, such as image 3 As shown, the structure includes Schottky contacts and ohmic contacts to the p-GaN cap layer, where the ohmic contacts are only located at important positions, the spacing between them is <1000um, and the total area is larger than the total area of ​​the Schottky contacts Much smaller, as a preferred embodiment but not limited to this embodiment, the total contact area of ​​the plurality of Schottky contacts is greater than 1000 times the total contact area of ​​the plurality of ohmic contacts, so as to Match the leakage levels of the Schottky and Ohmic contacts while providing enough holes through the Ohmic contact area to eliminate the floating p-GaN problem.

Embodiment 2

[0033] The present invention also provides a novel GaN HEMT device, including an enhanced GaN HEMT device and a combined contact structure, the combined contact structure including an ohmic contact and a Schottky contact;

[0034] The combined contact structure is arranged on the upper part of the p-GaN cap layer of the enhanced GaN HEMT device.

[0035] The ohmic contact part forms an ohmic contact with the p-GaN cap layer of the enhancement mode GaN HEMT device;

[0036] The Schottky contact forms an ohmic Schottky contact with the p-GaN cap layer of the enhancement mode GaN HEMT device.

[0037] Wherein, the enhanced GaN HEMT device includes a substrate, an (Al)GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a p-GaN cap layer in sequence from bottom to top.

[0038] The number of the ohmic contact portion and the Schottky contact portion are plural; the plurality of the ohmic contact portions and the plurality of the Schottky contact portions are arranged...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a combined contact structure and a novel GaN HEMT device. The novel GaN HEMT device comprises an enhanced GaN HEMT device and a combined contact structure; the combined contact structure comprises an ohmic contact part and a Schottky contact part; the combined contact structure is arranged at the upper part of a p-GaN cap layer of the enhanced GaN HEMT device; the ohmic contact part is in ohmic contact with the p-GaN cap layer of the enhanced GaN HEMT device; and the Schottky contact part and the p-GaN cap layer of the enhanced GaN HEMT device form ohmic contact and Schottky contact. According to the invention, enough holes are provided through the ohmic contact part so as to eliminate the floating p-GaN effect, and the grid electric leakage of ohmic contact is reduced through the arrangement of the Schottky contact part.

Description

technical field [0001] The invention relates to the technical field of switching devices, in particular to a combined contact structure and a novel GaN HEMT device. Background technique [0002] Due to the advantages of high voltage resistance, high temperature resistance, and high power density, GaN-based power devices have broad application prospects in the field of power electronics. GaN HEMTs (high electron mobility transistors) have two-dimensional electron gas (2DEG) due to polarization. The structure of a depletion-mode GaN HEMT device is as figure 1 shown. However, considering the safety and efficiency of the circuit, most of the devices required in practical applications are enhanced GaN HEMT devices. Enhancement-mode GaN HEMT devices can be realized by adding a p-GaN cap layer on top of depletion-mode GaN HEMT devices, with a structure such as figure 2 As shown, the p-GaN gate HEMT can make the threshold voltage Vth>1.0V by adjusting the device epitaxial layer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/47H01L29/45H01L29/778H01L29/812
CPCH01L29/475H01L29/452H01L29/7786H01L29/812
Inventor 李亦衡武乐可黄克强秦佳明王强宋亮朱友华朱廷刚
Owner JIANGSU CORENERGY SEMICON CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com