Novel entropy source structure and manufacturing method based on gate overhang modulating transistor

Abstract

The invention discloses a novel entropy source structure and a manufacturing method thereof based on gate overhang modulating transistors. The novel entropy source structure includes a single crystal silicon substrate, an active region disposed on the upper side of the single crystal silicon substrate, and an active region disposed on the active region. The polysilicon on the upper side of the source region, the part of the polysilicon covering the active region forms the channel region, and the part of the polysilicon extending from the channel region to the outside forms the overhang of the gate; the length of the overhang at both ends of the polysilicon is not equal, and the overhang of the polysilicon The channel region at the shorter end is partially invaded by ion lateral diffusion to form a leakage channel, and the formed leakage channel is equivalent to a parasitic resistance connected in parallel between the source and drain of the transistor. The above-mentioned new entropy source structure, the difference in the amount of overhang of the polysilicon forms an entropy source structure including parasitic resistance, the resistance of the parasitic resistance is randomly distributed, and the current of the entropy source structure has a wider distribution when the power supply voltage and temperature fluctuate And good distribution balance, greatly improving the reliability and randomness of the entropy source structure.

Description

technical field [0001] The invention relates to the technical field of integrated circuit hardware security, in particular to a novel entropy source structure and a manufacturing method based on gate overhang quantity modulation transistors. Background technique [0002] Building a digital China is an inevitable requirement for promoting economic and social development, promoting the modernization of the national governance system and governance capabilities, and is also an objective condition for meeting the people's growing needs for a better life. Therefore, in the era of the rising tide of global informatization, it is imperative for China to participate in the construction of the digital age. With the development of network technology, digital construction has gradually entered the field of vision of the country, enterprises and the public. In today's digital construction, governments and enterprises store their original business processes and key information content i...

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Problems solved by technology

[0005] The embodiment of the present invention provides a new type of entropy source structure based on gate overhang modulating transistors, aiming to solve the problem of poor reliability of entropy sources in prior art methods

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