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Split gate trench power MOSFET with self-aligned polycrystalline-to-polycrystalline isolation

A trench, polysilicon technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unacceptable gate-source leakage current

Pending Publication Date: 2022-02-22
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Transistor 10 will then experience an unacceptable level of gate-source leakage current (IGSS) in response to the application of the gate voltage

Method used

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  • Split gate trench power MOSFET with self-aligned polycrystalline-to-polycrystalline isolation
  • Split gate trench power MOSFET with self-aligned polycrystalline-to-polycrystalline isolation
  • Split gate trench power MOSFET with self-aligned polycrystalline-to-polycrystalline isolation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] now refer to image 3 , which shows a cross-section of one embodiment of a split-gate trench power metal oxide semiconductor field effect transistor (MOSFET) device 100 . In this embodiment, MOSFET device 100 is an n-type trench (nMOS) device formed in and on a semiconductor substrate 12 (eg, silicon) that provides a drain region for transistor 10 . Substrate 12 has a front side 14 and a back side 16 . A plurality of trenches 18 extend deep into substrate 12 from front side 14 . The trenches 18 extend longitudinally parallel to each other in a direction perpendicular to the cross-section (i.e., into and out of the illustrated page), adjacent trenches delimiting the side edges of the mesa regions 13 of the transistors forming the stripes (of this type Transistor devices are commonly referred to in the art as strip FET-type transistors). Each groove 18 includes a lower portion of the groove and an upper portion of the groove.

[0023]A region 24 doped with p-type dopa...

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PUM

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Abstract

The embodiment of the invention relates to a split gate trench power MOSFET with self-aligned polycrystalline-to-polycrystalline isolation. A semiconductor substrate has a trench extending from a front surface, the trench including a lower portion and an upper portion. The first insulating layer is arranged along the lower portion of the trench, and the first conductive material at the lower portion is insulated from the semiconductor substrate through the first insulating layer to form a field plate electrode of the transistor. The second insulating layer is arranged along the sidewall of the upper portion of the trench. A third insulating layer liners a top surface of the first conductive material at a bottom of the upper portion of the trench. A second conductive material fills an upper portion of the trench. The second conductive material forms a gate electrode of the transistor that is insulated from the semiconductor substrate by a second insulating layer and is further insulated from the first conductive material by a third insulating layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 065,198, filed August 13, 2020, the disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates generally to metal oxide semiconductor field effect transistor (MOSFET) devices, and in particular, to a split gate trench power MOSFET device. Background technique [0004] refer to figure 1 , which shows an embodiment of a cross section of a split gate trench power metal oxide semiconductor field effect transistor (MOSFET) device 10 . In this example, MOSFET device 10 is an n-channel (nMOS) type device formed in and on semiconductor substrate 12 (eg, silicon) doped with n-type dopants, which provides the drain of transistor 10. polar region. Substrate 12 has a front side 14 and a back side 16 . A plurality of trenches 18 extend deep from front side 14 to substrate 12 . The trenches 18 ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/40H01L29/423
CPCH01L29/66734H01L29/7813H01L29/404H01L29/407H01L29/4236H01L29/41766H01L29/42376H01L21/765H01L29/401
Inventor D·阿德南M·G·卡斯托里纳阮文征F·塔希尔
Owner STMICROELECTRONICS SRL