Semiconductor structure and manufacturing method of semiconductor structure

Abstract

The invention relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure comprises a substrate, a groove and a word line, the substrate comprises an isolation structure and an active region, and the active region comprises ions of a first type. The groove is located in the active region, the inner surface of the groove comprises an inversion doping layer and an oxide layer which are arranged adjacently, and the inversion doping layer is located above the oxide layer. The word line is located in the groove. The inversion doping layer comprises ions of a second type, and the first type is opposite to the second type. According to the semiconductor structure and the manufacturing method thereof, the inversion type doping layer with the doping type opposite to that of the active region is formed in the groove wall of the groove, so that a shallow junction (namely a PN junction) is formed to fix the active region, counteract part of drain terminal voltage and improve a peak electric field of a drain terminal depletion region, and then hot carrier tunneling is improved, so that the performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a method for manufacturing the semiconductor structure. Background technique [0002] DRAM (Dynamic Random Access Memory, DRAM) is a semiconductor device commonly used in electronic equipment such as computers, including a memory cell array for storing data, and peripheral circuits located on the periphery of the memory cell array. Each memory cell typically includes a transistor (word line), a bit line and a capacitor. The word line voltage on the transistor (word line) can control the transistor to be turned on and off, so that the data information stored in the capacitor can be read or written into the capacitor through the bit line. [0003] With the continuous development of the manufacturing process, the MOS feature size is continuously reduced, and the channel lateral electric field strength of the MOS device is continuously enhanced. ...

AI Technical Summary

Problems solved by technology

When the semiconductor word line transistor (NMOS) is working, due to the combined effect of the drain terminal voltage (Vdd) and the gate voltage (Vg), a strong electric field is formed near the drain, so the damage to the device by hot carriers mainly occurs In the oxide layer close to the drain, it will cause drift of transistor switching characteristics and severe degradation of device reliability

Images