Unlock instant, AI-driven research and patent intelligence for your innovation.

Bipolar electrostatic chuck for generic semiconductor manufacturing equipment and manufacturing method of bipolar electrostatic chuck

A technology for manufacturing equipment and electrostatic chucks, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to solve problems such as detachment from electrode surfaces, thermal deformation of shielding fixtures, and inability to provide sufficient adhesive force to improve utilization. , fast effect

Pending Publication Date: 2022-03-01
苏州众芯联电子材料有限公司
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when using this method, it is difficult to make the hollowing and interval of the masking fixture less than 1mm at the same time, and even if it is less than 1mm, it is difficult to stick the double-sided adhesive on the masking fixture without covering the hollowed out part, and When the width of the double-sided tape is too thin, it cannot provide enough adhesive force during the spraying process, and the masking fixture is easy to detach from the electrode surface due to thermal deformation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bipolar electrostatic chuck for generic semiconductor manufacturing equipment and manufacturing method of bipolar electrostatic chuck
  • Bipolar electrostatic chuck for generic semiconductor manufacturing equipment and manufacturing method of bipolar electrostatic chuck
  • Bipolar electrostatic chuck for generic semiconductor manufacturing equipment and manufacturing method of bipolar electrostatic chuck

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, and the protection scope of the present invention can be more clearly defined.

[0044] see attached Figures 5 to 8 As shown, a bipolar electrostatic chuck for pan-semiconductor manufacturing equipment in this embodiment includes a metal base upper plate 2, a metal base lower plate 1, an insulating layer-3 on the upper surface of the metal base upper plate 2, and an insulating layer Two 4; the insulating layer one 3 and the insulating layer two 4 are evenly arranged in the middle of the insulating layer 3 and the insulating layer 2, and the electrode layer one 5 and the electrode layer two 6 are evenly arranged. Figure 5 , the electrode layer 1 5 and the electrode layer 2 6 are staggered to form a glass substrate, and they...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a bipolar electrostatic chuck for generic semiconductor manufacturing equipment and a manufacturing method of the bipolar electrostatic chuck. The bipolar electrostatic chuck comprises a metal matrix upper plate, a metal matrix lower plate, an insulating layer I and an insulating layer II, wherein the insulating layer I and the insulating layer II are positioned on the upper surface of the metal matrix upper plate; a first electrode layer and a second electrode layer are horizontally and uniformly arranged between the first insulating layer and the second insulating layer in a staggered mode, the first electrode layer and the second electrode layer are each composed of a plurality of electrode wires, the width of each electrode wire is 0.5-1 mm, and the distance between the electrode wires is 0.2-1 mm. The first electrode layer and the second electrode layer are respectively connected with two power supply rods positioned in the upper plate of the metal substrate, and when a wafer is adsorbed, voltages with opposite polarities are respectively applied to the two power supply rods, so that static electricity with opposite polarities is formed on the surfaces of the first electrode layer and the second electrode layer. Sufficient adsorption force can be generated on the surface of the electrostatic chuck under low voltage, the probability of discharging when the electrostatic chuck is used is reduced, the static dissipation speed when a wafer or a glass substrate is replaced is increased, and the equipment utilization rate is increased.

Description

technical field [0001] The invention relates to the technical field of pan-semiconductor manufacturing equipment, in particular to a bipolar electrostatic chuck for pan-semiconductor manufacturing equipment and a manufacturing method thereof. Background technique [0002] Electrostatic chucks, also known as electrostatic chucks, are used in processing equipment in the pan-semiconductor industry (chips, panels, optoelectronic industries), such as dry etching equipment, chemical vapor deposition equipment, and ion implantation equipment. They are the core functional components of these equipment. Its main function is to hold wafers or glass substrates during chip or panel processing. [0003] The principle of electrostatic chuck adsorbing wafers or glass substrates: the surface of the electrostatic chuck is provided with upper and lower insulation layers and an electrode layer sandwiched between them. When in use, a voltage is applied to the electrode layer to generate static...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/6833
Inventor 张立祥赵凯
Owner 苏州众芯联电子材料有限公司