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Semiconductor process equipment and temperature control method of lower electrode chamber

A technology of process equipment and process chamber, which is applied in the field of temperature control of semiconductor process equipment and lower electrode chamber, and can solve the problems affecting the process effect and the performance of the lower electrode, etc.

Pending Publication Date: 2022-03-04
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the outer wall of the cooling pipeline is in contact with the water vapor in the gas, condensed water will be generated, and since the cooling pipeline needs to be led out from the bottom of the lower electrode, the bottom interface of the cooling pipeline and the part of the cooling pipeline close to the lower electrode will be set in Inside the chamber, so condensed water may come into contact with the lower electrode, which will affect the performance of the lower electrode, thereby affecting the process effect

Method used

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  • Semiconductor process equipment and temperature control method of lower electrode chamber
  • Semiconductor process equipment and temperature control method of lower electrode chamber
  • Semiconductor process equipment and temperature control method of lower electrode chamber

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Embodiment 1

[0037] This embodiment provides a semiconductor process equipment, such as figure 1 As shown, it includes a process chamber 6 in which a pedestal 2 is used to carry a wafer and apply RF power to the wafer; the bottom of the process chamber 6 is provided with a lower electrode chamber 1 . In order to adjust the temperature of the wafer, a temperature adjustment unit 3 is provided in the semiconductor process equipment, and the temperature adjustment unit 3 is connected to the bottom of the base 2, and is used to transfer the temperature to the base through a part of the temperature adjustment pipeline 31 located inside the lower electrode chamber 1. 2 to adjust the temperature of the susceptor 2, so that the temperature of the wafer can be adjusted by adjusting the temperature of the susceptor 2. When the temperature adjustment unit 3 cools the base 2, the water vapor in the gas inside the lower electrode chamber 1 is very likely to condense and form condensed water when it con...

Embodiment 2

[0067]On the basis of the semiconductor process equipment proposed in embodiment 1, such as Figure 6 As shown, this embodiment provides a method for controlling the temperature of the lower electrode chamber applied to the above-mentioned semiconductor process equipment, which includes the following steps:

[0068] Step S1: Detect the current humidity and current humidity of the gas inside the lower electrode chamber;

[0069] Step S2: Obtain the corresponding target dew point temperature according to the preset temperature of the base, and then obtain the lower electrode chamber according to the corresponding relationship between the target dew point temperature and the preset temperature of the gas inside the lower electrode chamber corresponding to the current humidity and the dew point temperature The target temperature of the gas inside the chamber;

[0070] Step S3: Determine whether the current temperature of the gas inside the lower electrode chamber reaches the targ...

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Abstract

The invention provides semiconductor process equipment and a temperature control method of a lower electrode chamber. The equipment comprises a control unit, a purging unit and a detection unit, wherein the detection unit is used for detecting the current temperature and the current humidity of gas in the lower electrode chamber; the purging unit is communicated with the interior of the lower electrode chamber and is used for introducing purging gas into the lower electrode chamber and adjusting the temperature of the purging gas; the control unit is used for acquiring the corresponding target dew point temperature according to the preset temperature of the base, and then acquiring the target temperature of the gas in the lower electrode chamber according to the target dew point temperature and the preset corresponding relation between the temperature of the gas in the lower electrode chamber corresponding to the current humidity and the dew point temperature; whether the current temperature reaches the target temperature or not is judged, if not, the purging unit is controlled to adjust the temperature of the purging gas until the current temperature reaches the target temperature, and therefore condensation in the lower electrode chamber can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor process equipment and a method for controlling the temperature of a lower electrode chamber. Background technique [0002] During the plasma process, the wafer is usually placed on the lower electrode, for example, placed on an Electro Static Chuck (ESC) with a built-in lower electrode, so as to perform processes such as plasma etching or deposition. Since the plasma in the process often has extremely high chemical activity and high temperature, it is necessary to use the lower electrode or electrostatic chuck to cool the wafer to ensure that the temperature of the wafer will not be too high. [0003] In the prior art solution, the process equipment is usually provided with a cooling pipeline, so that the temperature of the lower electrode can be adjusted by using the cooling liquid continuously flowing in the cooling pipeline, and then the temperature o...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/32522
Inventor 杨雄
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD