Positive and negative voltage bidirectional switching circuit

Abstract

The invention discloses a positive and negative voltage bidirectional switching circuit, belongs to the technical field of switching circuits in control systems, and solves the technical problems that a switching circuit in the prior art is poor in universality and is easily influenced by a port potential difference. The complementary circuit comprises a complementary circuit module composed of integrated monopole type tubes, one end of the complementary circuit module is connected with a grounding end through a first enabling tube, the other end of the complementary circuit module is connected with a power supply end through a second enabling tube, the complementary circuit module is at least provided with a first port A and a second port B, the first enabling tube comprises an enabling end EN, the second enabling tube comprises an enabling end ENB, and the enabling end EN comprises an enabling end EN. Wherein the complementary circuit module is used for switching on or switching off a switch through control signals of the enabling end EN and the enabling end ENB when the voltage of the first port A and the voltage of the second port B are equal or unequal. The circuit supports positive and negative voltage of a port and bidirectional conduction, the integration level is high, and the universality and usability of the control switch are improved.

Description

technical field [0001] The invention belongs to the technical field of switch circuits in control systems, and in particular relates to a positive and negative voltage bidirectional switch circuit. Background technique [0002] Traditional positive pressure unidirectional switch circuits, such as figure 1 As shown, the complementary switching power transistors are composed of PMOS transistors and NMOS transistors connected in parallel, in which: A and B are two external ports, enabling terminals EN and ENB are two opposite control logics, and can only be applied to the A terminal voltage When the voltage of terminal B is higher than that of terminal B. When the voltage at the B terminal is higher than that of A, no matter whether the EN and ENB logics are high or low, the body diodes of the NMOS transistor and the PMOS transistor will be turned on at the same time, and the circuit structure will lose the switching function. [0003] In view of this, the present invention i...

AI Technical Summary

Problems solved by technology

When the voltage at the B terminal is higher than that of A, regardless of whether EN and ENB logic is high or low, the body diodes of the NMOS transistor and the PMOS transistor will be turned on at the same time, and the circuit structure will lose the switching function.

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