Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof, and the semiconductor structure comprises a substrate which is internally provided with a conductive structure; the first lower electrode and the second lower electrode are sequentially stacked, the first lower electrode is located between the second lower electrode and the substrate, the first lower electrode is columnar, the second lower electrode is groove-shaped, and the first lower electrode is electrically connected with the conductive structure; the first dielectric layer covers the surface of the side wall of the first lower electrode, and the first upper electrode is located on the side, away from the first lower electrode, of the first dielectric layer; and a second dielectric layer and a second upper electrode, the second dielectric layer covers the inner wall and the bottom surface of the second lower electrode, and the second upper electrode is filled in the groove of the second lower electrode. The invention provides a novel capacitor structure which is favorable for improving the capacitance value of a single capacitor structure.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] As semiconductor structures shrink in size, it becomes increasingly difficult to increase the capacitance of a single capacitive structure or maintain the capacitance of a single capacitor. When using the same dielectric layer material, the increase in capacitance can only be achieved by increasing the surface area of ​​the electrode plate or reducing the thickness of the dielectric layer, but the latter may cause problems with excessive leakage current. [0003] Therefore, changing the capacitor structure to increase the surface area of ​​the electrode plate is an important development direction for increasing the capacitance value of the capacitor structure. Contents of the invention [0004] Embodiments of the present invention provide a semiconductor structure...

AI Technical Summary

Problems solved by technology

[0002] Increasing the capacitance of a single capacitive structure or maintaining the capacitance of a single capacitor becomes increasingly difficult as the dimensions of semiconductor structures shrink

When using the same dielectric layer material, the increase in capacitance can only be achieved by increasing the surface area of ​​the electrode plate or reducing the thickness of the dielectric layer, but the latter may cause problems with excessive leakage current

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