Method for reducing particles generated in PECVD (plasma enhanced chemical vapor deposition) film deposition process

Abstract

The invention discloses a method for reducing particles generated in the PECVD thin film deposition process. The method comprises the following steps that S1, a wafer is conveyed into a PECVD cavity through a conveying mechanism and preheated; s2, side reaction gas in the process gas is introduced into the PECVD chamber, and the chamber pressure in the PECVD chamber is kept stable; s3, turning on the radio frequency power supply and keeping the radio frequency power supply for a first preset time until the plasma in the PECVD chamber is in a stable state; s4, introducing a main reaction gas in the process gas into the PECVD chamber, starting to deposit the thin film until the thickness of the thin film reaches a preset thickness, and closing the main reaction gas; and S5, continuously maintaining the on state of the radio-frequency power supply for a second preset time, then closing the radio-frequency power supply, and simultaneously closing the side reaction gas. According to the method for reducing the particles generated in the PECVD thin film deposition process, the sequence of the process reaction gas entering the PECVD cavity and the radio frequency starting sequence are optimized to reduce the particles generated in the PECVD thin film deposition process, and the effect of reducing the particles generated on the surface of the thin film is quite remarkable.

Description

Technical field [0001] The present invention relates to the field of integrated circuitry deposition techniques, and more particularly to a method of reducing the generation of particles during the PECVD deposition film. Background technique [0002] In the integrated circuit manufacturing process, film deposition has a very important position. As the size of the integrated circuit is continuously reduced, new challenges are presented to the uniformity of the deposited film and the film surface particles (in-film particles). [0003] The film surface particles directly affect the yield of the entire integrated circuit, wherein when the film is deposited as a hard mask, the film surface particles will affect the photoresist, and the exposure is affected, and the lithographic pattern is transmitted; when the deposition film is used When the electrical film, the film surface particles affect the insulation of the film, which may cause short circuit or breakdown between the two wires...

AI Technical Summary

Problems solved by technology

[0005] However, the particles produced during the film deposition process are very troublesome. For PECVD, the deposition process is the process of radio frequency dissociation reflection gas deposition on the wafer. The deposition process is a complex reaction process, mainly affected by radio frequency, process gas, chamber Due to the common influence of the environment, the reasons for the generation of particles during the deposition process are also relatively complicated

In the prior art, the generation of particles during the deposition process is avoided as much as possible by precisely controlling the process gas flow, cavity pressure, and RF power output, which not only consumes a huge process cost, is not easy to achieve, but also does not have a significant effect on the reduction of particles on the surface of the film.

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