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High-dynamic pixel structure

A pixel structure, high dynamic technology, applied in the field of image sensors, can solve the problems of inability to quantify photoelectric signals, FD is prone to premature saturation, narrow light intensity range, etc., to expand the dynamic range, avoid premature saturation, and expand the light intensity range Effect

Pending Publication Date: 2022-03-22
WILL SEMICON (SHANGHAI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Under low light, the photoelectric signal cannot be quantified due to weak light; under strong light, FD is prone to premature saturation
Therefore, the light intensity range is narrow

Method used

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Embodiment 1

[0051] Such asfigure 1 , figure 2 As shown, FD of the pixel structure is separated from the TX tube to form FD1, FD2 and FD3 in sequence. FD1 adopts small area and high N-type ion implantation, FD2 adjacent to it has a larger area than FD1 and a lower N-type ion implantation concentration than FD1, and FD3 adjacent to FD2 has a larger area than FD2 and lower N-type ion implantation concentration than FD2.

[0052] The principle of the embodiment is:

[0053] The FD consists of three regions with different areas and different ion implantation concentrations. By controlling the FD area, variable FD capacitance and FD conversion gain are formed, and a potential gradient is formed by controlling the doping concentration;

[0054] Under weak light, FD1 with high potential works, and FD1 corresponds to high conversion gain, which can convert a small amount of electrons into a strong voltage signal, avoiding the problem that the photoelectric signal cannot be quantified due to wea...

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Abstract

The invention discloses a high-dynamic pixel structure which at least comprises a photodiode (PD), a transmission tube (TX), a suspension node (FD), a reset tube (RESET), a source follower (SF), a row gate tube (SELECT), a power supply (VDD) and a pixel output (VOUT) which are arranged in a semiconductor substrate. The FD comprises three regions with different areas and different ion implantation concentrations. By controlling the FD area, variable FD capacitance and FD conversion gain are formed, and by controlling the doping concentration, potential gradient is formed. Under weak light, the FD1 with high potential acts, and the FD1 corresponds to high conversion gain, so that a small amount of electrons can be converted into stronger voltage signals, and the problem that photoelectric signals cannot be quantized due to weak light is avoided. Under strong light, the FD1, the FD2 and the FD3 work at the same time, the conversion gain is small, the FD can collect many photoelectrons, the problem that the FD is saturated too early under the strong light is avoided, the light intensity range is effectively expanded, and therefore the dynamic range of pixels is expanded.

Description

technical field [0001] The invention relates to an image sensor, in particular to a high dynamic pixel structure. Background technique [0002] Image sensors are commonly used devices at present, and the pixel structure of image sensors in the prior art has at least the following disadvantages: [0003] Under low light, the photoelectric signal cannot be quantified due to weak light; under strong light, FD is prone to premature saturation. Therefore, the light intensity range is narrow. [0004] In view of this, the present invention is proposed. Contents of the invention [0005] The object of the present invention is to provide a high dynamic pixel structure to solve the above-mentioned technical problems in the prior art. [0006] The purpose of the present invention is achieved through the following technical solutions: [0007] The high dynamic pixel structure of the present invention includes a photodiode 102 placed in a semiconductor substrate 101, a transfer tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/355H01L27/146
CPCH01L27/1461H04N25/57H04N25/59H04N25/76
Inventor 陈多金旷章曲王菁龚雨琛陈杰徐景星衷世雄
Owner WILL SEMICON (SHANGHAI) CO LTD
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