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Voltage distribution analysis method based on read data

A technology of voltage distribution and analysis method, applied in read-only memory, information storage, static memory and other directions, can solve the problems of NAND analysis method being difficult to meet, not knowing the original data of the data disk, etc., to improve efficiency and reduce the cost of reading data. effect of times

Active Publication Date: 2022-03-25
杭州阿姆科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the development process of SSD solid state drive, when locating the problem disk, in most cases, it is not known what the original data in the current data disk is.
In this case, if you want to analyze whether the state of a certain physical block is normal through the voltage distribution curve, it is obviously difficult to meet this requirement using the existing NAND analysis method

Method used

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  • Voltage distribution analysis method based on read data
  • Voltage distribution analysis method based on read data
  • Voltage distribution analysis method based on read data

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Embodiment Construction

[0052] In order to facilitate those skilled in the art to better understand the present invention, the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The following is only exemplary and does not limit the protection scope of the present invention.

[0053] The invention discloses a voltage distribution analysis method based on read data, which does not limit the type of NAND Flash applied, regardless of SLC, MLC, TLC or QLC, and also does not require different data sample sizes collected, which can be one The data of one or more WLs (Word Lines), or the data of one or more physical blocks, as long as the method described in this embodiment is followed, the corresponding voltage distribution analysis diagram can be drawn.

[0054] A voltage distribution analysis method based on read data described in this embodiment is applied to NAND Flash, such as figure 1 shown, including at least the steps:...

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Abstract

The invention discloses a voltage distribution analysis method based on read data, which is applied to NAND Flash and comprises the following steps: determining the range of voltage to be measured according to a known standard voltage distribution diagram; determining a plurality of to-be-measured voltage shifts in the range of the to-be-measured voltage, wherein the to-be-measured voltage shifts refer to shifts of voltage threshold points used when original data in the NAND Flash is read; all the voltage threshold points are bound together for gear shifting, and original data in the NAND Flash are read and stored; calculating the relative number of storage states judged by each to-be-detected voltage gear corresponding to each voltage threshold point, and representing the relative number by CountX (i); and pre-drawing a voltage distribution diagram, and processing the CountX (i) based on the pre-drawn voltage distribution diagram to obtain a final voltage distribution diagram. According to the method, all voltage threshold points are bound and uniformly shifted and read, and the voltage distribution condition can be quickly obtained only based on read data, so that whether the state of the tested physical block is abnormal or not is judged.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a voltage distribution analysis method based on read data. Background technique [0002] A solid-state drive (SSD), also known as a solid-state drive, is a hard disk made of solid-state electronic memory chip arrays. It usually consists of three major parts, namely the SSD main control chip, the flash memory particle array for storing data, and the cache chip. Compared with traditional mechanical hard drives, solid-state drives have the advantages of fast read and write speed, light weight, low energy consumption and small size, making them widely used in consumer markets, data centers and enterprise markets. [0003] The judgment voltage of NAND flash memory particles will directly affect the effectiveness of data storage. If testers can intuitively grasp the test results of voltage distribution, they can easily find out the best judgment voltage applicable to the current p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/30G11C29/12
CPCG11C16/26G11C16/30G11C29/12G11C29/12005
Inventor 雷莉冯立晖廖莎
Owner 杭州阿姆科技有限公司
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