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Groove filling type super junction power device and process method

A power device and trench filling technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unfavorable super junction performance and achieve the effect of small device on-resistance

Pending Publication Date: 2022-03-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the expectation of the inverted trapezoidal P-pillar morphology is just the opposite of the requirement for trench filling, which is not conducive to improving the performance of the super junction.

Method used

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  • Groove filling type super junction power device and process method
  • Groove filling type super junction power device and process method
  • Groove filling type super junction power device and process method

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Embodiment Construction

[0037]The specific embodiments of the present invention are given below in conjunction with the accompanying drawings, and the technical solutions in the present invention are clearly and completely described, but the present invention is not limited to the following embodiments. Apparently, the described embodiments are some, not all, embodiments of the present invention. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. It should be understood that the invention can be embodied in different forms and should not be construed as limited to the e...

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Abstract

The invention discloses a process method of a groove filling type super junction power device, a drift region is formed by adopting a groove process, the drift region and an epitaxial layer on the periphery of a groove form a super junction structure, the section structure of the groove type drift region is an inverted trapezoidal structure, and the transverse width of the upper end of the groove type drift region is larger than that of the lower end. The drift region of the shallow surface layer has the impurity concentration as high as possible, full depletion of the drift region of the shallow surface layer is facilitated in the super junction structure, and the on-resistance can be reduced. The invention further discloses a process method of the power device, the existing groove etching and filling process is adopted, the process difficulty is reduced, and better performance of the device is achieved.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a trench-filling super junction power device. [0002] The present invention also relates to a manufacturing process method for the above-mentioned device. Background technique [0003] Super junction power device is a new type of power semiconductor device with rapid development and wide application. It is based on double-diffused metal oxide semiconductor (DMOS), by introducing a super junction (Super Junction) structure, in addition to DMOS high input impedance, fast switching speed, high operating frequency, good thermal stability, simple drive circuit, easy to In addition to features such as integration, it also overcomes the disadvantage that the on-resistance of DMOS increases with the breakdown voltage to the power of 2.5. At present, super-junction DMOS has been widely used in power supplies or adapters for consumer electronics products su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/78
CPCH01L29/0634H01L29/0684H01L29/66734H01L29/7813
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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