Ultrasonic bonding wire bonding machine and semiconductor device packaging method and structure

Abstract

The invention provides an ultrasonic bonding wire bonding machine and a semiconductor device packaging method and structure. The packaging method comprises the following steps: placing a first chip and a second chip in parallel up and down at an interval, and enabling a first welding spot of the first chip to correspond to a second welding spot of the second chip up and down; placing a metal lead with a preset length in lead channels at two ends of an ultrasonic bonding wire bonding machine, and vertically placing the metal lead between the first chip and the second chip; and ultrasonically bonding two ends of the metal lead to the first welding spot of the first chip and the second welding spot of the second chip respectively. According to the invention, the chip is designed to be in an up-and-down opposite layout, the metal leads are subjected to ultrasonic bonding in the direction perpendicular to the surface of the chip, through the design, even if thermal stress is generated by temperature change, shear stress in the cross section direction of the leads does not occur, and the bonding positions of the leads are not easy to break; fatigue failure caused by repeated thermal stress of the lead can be effectively avoided, and the reliability of the device can be improved.

Description

technical field [0001] The invention relates to the technical field of packaging, in particular to an ultrasonic bonding wire bonding machine, a semiconductor device packaging method and structure. Background technique [0002] Wire bonding (Wire Bonding) is a package that uses thin metal wires and uses heat, pressure, and ultrasonic energy to tightly weld the metal leads and substrate pads to achieve electrical interconnection between chips and substrates and information exchange between chips. technology. Under ideally controlled conditions, electron sharing or interdiffusion of atoms occurs between the lead and the substrate, enabling atomic-scale bonding between the two metals. [0003] The existing wire bonding process is usually to place two chips at intervals on the same horizontal plane, firstly solder the first end of the wire to the wire bonding position A of the first chip 11, and then pull the wire at the end of the wire bonding machine. Move to the second chip...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an ultrasonic bonding wire machine, semiconductor device packaging method and structure, which is used to solve the problem of placing chips at intervals on the same horizontal plane for wire bonding in the prior art. When the packaged chip is in use, thermal deformation will occur at the wire bonding due to temperature rise. Repeated temperature changes will eventually lead to lead fatigue failure, resulting in degradation of device performance or even complete failure.

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