Formation method of semiconductor structure

Abstract

A forming method of a semiconductor structure comprises the following steps: providing a substrate; forming a dielectric layer and an initial conductive layer located in the dielectric layer on the substrate, wherein the dielectric layer exposes the top surface of the initial conductive layer; modifying part of the initial conductive layer to form a conductive layer and a modified layer located on the conductive layer; and removing the modified layer. The performance of the semiconductor structure formed by the method is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] The metal interconnection structure is an indispensable structure in semiconductor devices, which is used to realize the interconnection between active regions, the interconnection between transistors, or the interconnection between different layers of metal lines, Complete signal transmission and control. Therefore, in the semiconductor manufacturing process, the formation of the metal interconnection structure has a great influence on the performance of the semiconductor device and the semiconductor manufacturing cost. In order to increase the density of devices, the size of semiconductor devices in integrated circuits has been continuously reduced. In order to realize the electrical connection of various semiconductor devices, a multi-layer interconnection structure is usually required. ...

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Problems solved by technology

[0004] However, the manufacturing process of the local interconnect structure in the prior art needs to be improved, and the performance of the formed semiconductor structure needs to be further improved

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