Preparation method of broadband high-transmittance Al2O3/MgF2 double-layer antireflection film

An anti-reflection film and broadband technology, applied in coating, sputtering coating, metal material coating process, etc., can solve the problems affecting the optical performance of double-layer anti-reflection film, high refractive index of film, etc., and achieve average transmittance Improvement, light transmission performance improvement, and the effect of increasing transmittance

Pending Publication Date: 2022-04-05
TIANJIN POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Al prepared by magnetron sputtering 2 o 3 The high refractive index of the film seriously affects the Al 2 o 3 / MgF 2 Optical properties of double-layer anti-reflection film

Method used

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  • Preparation method of broadband high-transmittance Al2O3/MgF2 double-layer antireflection film
  • Preparation method of broadband high-transmittance Al2O3/MgF2 double-layer antireflection film
  • Preparation method of broadband high-transmittance Al2O3/MgF2 double-layer antireflection film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Take Al 2 o 3 Preparation of broadband and high transmission double-layer Al by magnetron sputtering method for the target 2 o 3 / MgF 2 A thin film method comprising the steps of:

[0017] (1)O 2 Gas doping amount setting: high-purity O 2 (99.999%) as a reaction gas, with high-purity Ar 2 (99.999%) as the working gas, the total gas flow is set to 80sccm during sputtering, the O 2 / Ar 2 The gas flow ratios were set to 5% to allow the gases to mix well in the reaction chamber.

[0018] (2) Sputtering Al 2 o 3 Parameter setting: the sputtering working pressure is set to 0.5Pa; the sputtering power is set to 50W.

[0019] (3) Sputtering MgF 2 Parameter setting: with high-purity Ar 2 (99.999%) as working gas, high purity SF 6 (99.999%) as the reaction gas, the total gas flow rate during sputtering is set to 60 sccm, the SF 6 / Ar 2 The gas flow ratio is set to 0.5%, the sputtering working pressure is 0.1Pa; the sputtering power is set to 30W.

Embodiment 2

[0021] Take Al 2 o 3 Preparation of broadband and high transmission double-layer Al by magnetron sputtering method for the target 2 o 3 / MgF 2 A thin film method comprising the steps of:

[0022] (1)O 2 Gas doping amount setting: high-purity O 2 (99.999%) as a reaction gas, with high-purity Ar 2 (99.999%) as the working gas, the total gas flow is set to 80sccm, O 2 / Ar 2 The gas flow ratios were set to 10% so that the gases were well mixed in the reaction chamber.

[0023] (2) Sputtering Al 2 o 3 Parameter setting: the sputtering working pressure is set to 1.0Pa; the sputtering power is set to 115W.

[0024] (3) Sputtering MgF 2 Parameter setting: with high-purity Ar 2 (99.999%) as working gas, high purity SF 6(99.999%) as the reaction gas, the total gas flow rate during sputtering is set to 60 sccm, the SF 6 / Ar 2 The gas flow ratio is set to 1%, the sputtering working pressure is 0.5Pa; the sputtering power is set to 60W.

Embodiment 3

[0026] Take Al 2 o 3 Preparation of broadband and high transmission double-layer Al by magnetron sputtering method for the target 2 o 3 / MgF 2 A thin film method comprising the steps of:

[0027] (1)O 2 Gas doping amount setting: high-purity O 2 (99.999%) as a reaction gas, with high-purity Ar 2 (99.999%) as the working gas, the total gas flow is set to 80sccm, O 2 / Ar 2 The gas flow ratios were set to 15% to allow the gases to mix well in the reaction chamber.

[0028] (2) Sputtering Al 2 o 3 Parameter setting: the sputtering working pressure is set to 1.5Pa; the sputtering power is set to 150W.

[0029] (3) Sputtering MgF 2 Parameter setting: with high-purity Ar 2 (99.999%) as working gas, high purity SF 6 (99.999%) as the reaction gas, the total gas flow rate during sputtering is set to 60 sccm, the SF 6 / Ar 2 The gas flow ratio is set to 2%, the sputtering working pressure is 1.5Pa; the sputtering power is set to 120W.

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Abstract

The invention belongs to the technical field of optical thin films, and discloses a preparation method of a broadband high-transmittance double-layer Al2O3 / MgF2 antireflection film, which comprises the following steps: O2 gas doping amount setting, Al2O3 sputtering parameter setting and MgF2 sputtering parameter setting, and used target materials are Al2O3 (the specification is 101.6 * 3mm, 99.99%), MgF2 (the specification is 101.6 * 3mm, 99.99%) and Ar2 (99.999%) as working gases, and O2 (99.999%) and SF6 (99.999%) as reaction gases; according to the method, Al2O3 and MgF2 are used as target materials, Ar2 (99.999%) is used as working gas, O2 (99.999%) and SF6 (99.999%) are used as reaction gas, the gas flow ratio of reaction gas O2 / Ar2, sputtering power and working pressure are adjusted when the Al2O3 film is sputtered, so that the stoichiometric ratio of O / Al in the Al2O3 film is 1.5: 1 higher than the normal stoichiometric ratio, the refractive index of the Al2O3 film is reduced, and the yield of the Al2O3 film is improved. Further, the transmittance of the double-layer Al2O3 / MgF2 coated glass is improved. The double-layer Al2O3 / MgF2 antireflection film prepared by adopting the technical scheme can be applied to optical devices, the preparation process is simple, and the cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of optical thin films, in particular to an Al 2 o 3 Preparation of broadband and high transmission double-layer Al by magnetron sputtering method for the target 2 o 3 / MgF 2 thin film method. Background technique [0002] Solar cells are widely used in daily life, industry, astronomy, military, electronics and other fields. With the development of industrial technology, people put forward higher requirements for the photoelectric conversion efficiency of solar cells. As an important part of the solar cell, the cover glass is in direct contact with the external environment and plays the role of wind, rain and dust protection. At the same time, the glass cover changes the photoelectric conversion efficiency of the solar cell by affecting the transmittance. However, due to the difference in refractive index between the air and the glass substrate, the incident light has Fresnel reflection loss on the sur...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C23C14/06C23C14/54
Inventor 刘俊成马超樊小伟付亚东
Owner TIANJIN POLYTECHNIC UNIV
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