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Silicon piezoresistive sensor device with island film structure

A technology of sensor device and membrane structure, which is applied in measurement device, measurement of the property force of piezoelectric resistance material, instrument, etc., can solve the problems of large deflection, small sensor size, affecting the linearity of the sensor, etc., and achieve good linearity. , the effect of high sensitivity

Pending Publication Date: 2022-04-08
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the pressure is not high, and the size of the sensor is small, when a flat diaphragm is used, the thickness of the sensing diaphragm needs to be reduced in order to improve the sensitivity of the sensor, which may cause large deflection and seriously affect the linearity of the sensor

Method used

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  • Silicon piezoresistive sensor device with island film structure
  • Silicon piezoresistive sensor device with island film structure
  • Silicon piezoresistive sensor device with island film structure

Examples

Experimental program
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Embodiment Construction

[0020] Such as figure 1 and 2 As described above, a silicon piezoresistive sensor device with an island film structure includes a substrate 1 of a square silicon wafer. On the substrate 1 , a first groove 3 is provided downward on the upper surface of the substrate 1 . A pressure-sensitive layer 2 is bonded to the substrate 1 , and the pressure-sensitive layer 2 is also a square silicon wafer with a size corresponding to the substrate 1 .

[0021] On the lower surface of the pressure sensitive layer 2 is provided a second tank body 4 with an opening downward and the opening end communicating with the first tank body 3 . Thus, an airtight cavity is formed inside the pressure sensitive layer 2 and the substrate 1 . A trapezoidal cube with the same four sides protrudes downward from the center of the bottom of the second tank body 4 to form an island-shaped structure 5 protruding from the bottom surface of the second tank body 4 . The second groove body 4 is formed into an ann...

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Abstract

The invention provides an island film structure silicon piezoresistive sensor device which comprises a substrate (1), a pressure sensitive layer (2) arranged on the substrate (1), a first groove body (3) arranged on the substrate (1), a second groove body (4) arranged at the bottom of the pressure sensitive layer (2) and communicated with the first groove body (3), an island-shaped structure (5) arranged in the second groove body (4), and an oxide layer (6) arranged on the pressure sensitive layer (2). The pressure sensitive layer (2) is provided with a group of blind holes (7) penetrating through the oxide layer (6) upwards, piezoresistors (8) are arranged in the blind holes (7), a group of bonding pads (10) are uniformly distributed on the oxide layer (6), and leads (9) communicated with the bonding pads (10) and the piezoresistors (8) are arranged on the oxide layer (6). Based on the combination of the small-size sensitive layer and the E-type island film structure, the high sensitivity and linearity performance of the chip are well considered, and the requirements of the sensor for the small size, high sensitivity, high precision and high reliability of the sensitive chip are met.

Description

Technical field: [0001] The invention relates to the technical field of sensor manufacturing, in particular to an island film structure silicon piezoresistive sensor device. Background technique: [0002] Sensor technology is an important symbol of the development level of modern science and technology, and one of the three pillars of information technology (including sensing and control technology, communication technology and computer technology). Among the many sensor varieties, pressure sensors account for the largest proportion, accounting for about 50% of the market share in the sensor market. With the advancement of technology, the market demand for miniaturized, high-sensitivity, high-precision, and high-reliability pressure sensors is becoming more and more urgent. Therefore, a small E-type island membrane structure silicon piezoresistive sensor is designed to meet this demand. The piezoresistive pressure sensor is a pressure sensor made by using the piezoresistive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18G01L9/06G01L9/00
Inventor 王自刚曹卫达邹治弢闫洁周宇飞
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE