Performance detection method and detection circuit for DRAM (Dynamic Random Access Memory)

Abstract

The invention relates to a performance detection method and detection circuit of a DRAM (Dynamic Random Access Memory). The performance detection method of the DRAM comprises the following steps: respectively connecting one end of a word line and / or one end of a bit line of a storage unit with a measurement bonding pad, wherein the storage unit is located at the edge of the DRAM; applying a measurement voltage or a measurement current to one end of the word line and / or one end of the bit line connected to the measurement pad; and outputting a measurement result through the measurement bonding pad. One end of the word line and / or one end of the bit line of the storage unit located at the edge of the DRAM are / is connected with the measurement bonding pad, the measurement voltage or the measurement current is applied, and the measurement result is output, so that the performance of the storage can be detected under the condition that the storage unit is not influenced, and the product yield and the product cost are not influenced.

Description

technical field [0001] The present application relates to the technical field of DRAM memory, in particular to a performance detection method and a detection circuit of a DRAM memory. Background technique [0002] Due to the reduction in the size of the memory cell of DRAM, the operating voltage becomes lower, and the distribution of memory cells has a great impact on product performance. It is necessary to adjust the base end bias (Body Bias) of the substrate to minimize the influence caused by the distribution of memory cells. The characteristics of the storage unit are measured through a scribe lane (Scribe Lane), and then the product characteristics of the DRAM memory are adjusted according to the measured results. However, measurements made at the kerf cannot fully characterize the product. Moreover, with the miniaturization of the semiconductor process, various unknown reasons may lead to inconsistencies between the characteristics measured on the kerf line and the c...

AI Technical Summary

Problems solved by technology

However, measurements made at the kerf cannot fully characterize the product

Moreover, with the miniaturization of the semiconductor process, various unknown reasons will lead to inconsistencies between the characteristics measured on the cutting line and the characteristics or distribution of surrounding products

[0003] It is difficult to measure the characteristics of memory cells in products. In order to directly measure the performance of DRAM memory cells inside the product, peripheral circuits need to be modified or added, but such modifications or additions are very difficult to achieve.

[0004] The existing technology can measure the characteristics of the storage unit inside the product, but this test method has a high probability of causing damage to the measured storage unit and affecting the yield of the product, so the measured storage unit needs to be repaired , making it a redundant memory cell (Redundant Memory Cell), resulting in an increase in cost

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