Miniature LED chip detection structure and preparation method thereof
A technology for LED chips and detection structures, which is applied in semiconductor/solid-state device testing/measurement, electrical components, electric solid-state devices, etc. Crystal points are not on the same plane, etc., to achieve the effect of improving the quality of the eutectic
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Embodiment 1
[0067] refer to figure 1 . The detection structure of the micro-LED chip in this embodiment is a common cathode and common anode structure, which includes a substrate 1, and a U-type gallium nitride layer 2 extending outward from one side of the substrate 1, and an N-type gallium nitride layer. Gallium layer 3, light-emitting layer 4 and P-type gallium nitride layer 5; the surface of the P-type gallium nitride layer 5 has a concave first groove 6 and a second groove formed deep into the N-type gallium nitride layer 2 Groove 7, the periphery of the first groove 6 is a first protrusion 8, the inner circle of the first groove 6 is a plurality of second protrusions 9, and a plurality of second protrusions 9 pass through the second concave grooves 7 intervals; the P-type gallium nitride layer 5 has an insulating layer 10, the insulating layer 10 has a first opening 11 at the first groove 6, and the insulating layer 10 has a first opening 11 at the second convex There is a second ...
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