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Preparation method of two-dimensional black phosphorus/indium selenide heterojunction

A technology of indium selenide and heterojunction, applied in the field of two-dimensional materials, can solve the problems of easy deterioration, short life, strong saturated absorption light of black phosphorus, etc.

Pending Publication Date: 2022-04-26
SHENZHEN UNIV
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  • Application Information

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Problems solved by technology

However, dyes, the initial saturable absorbers, have problems such as perishability and short lifespan. Therefore, the demand for saturable absorbers with better nonlinear absorbability characteristics has become urgent.
[0003] With the continuous development of science and technology and the advent of two-dimensional materials, scientists have begun to carry out a series of exploration and research on this type of materials. TMDs, topological insulators, black phosphorus, etc. have been researched one after another and can be widely used in the research of fiber lasers. However, due to the shortcomings of various materials, such as the high saturation absorption light intensity of black phosphorus, a single two-dimensional material cannot meet the demand gradually.

Method used

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  • Preparation method of two-dimensional black phosphorus/indium selenide heterojunction
  • Preparation method of two-dimensional black phosphorus/indium selenide heterojunction
  • Preparation method of two-dimensional black phosphorus/indium selenide heterojunction

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preparation example Construction

[0030] refer to figure 1 , figure 1 It is a schematic flow chart of a preparation method of a two-dimensional black phosphorus / indium selenide heterojunction of the present invention, the preparation method comprising:

[0031] S101. Grinding black phosphorus crystals and indium selenide crystals respectively, and adding isopropanol during the grinding process to obtain black phosphorus solution and indium selenide solution.

[0032] Specifically, in this step, a certain amount of black phosphorus crystals and indium selenide crystals were weighed and placed in different mortars at room temperature for grinding, and isopropanol was continuously added during the grinding process of the black phosphorus crystals and indium selenide crystals respectively. , to obtain black phosphorus solution and indium selenide solution respectively. Preferably, the mass ratio of black phosphorus crystals and indium selenide crystals may be 1:2.

[0033] S102. Mix the obtained indium selenide...

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Abstract

The invention discloses a preparation method of a two-dimensional black phosphorus / indium selenide heterojunction, which comprises the following steps: a, respectively grinding black phosphorus crystals and indium selenide crystals, and respectively adding isopropanol in the grinding process to obtain a black phosphorus solution and an indium selenide solution; b, mixing the obtained indium selenide solution with a black phosphorus solution to obtain a black phosphorus / indium selenide mixed solution; and c, centrifuging and drying the obtained black phosphorus / indium selenide mixed solution to obtain the two-dimensional black phosphorus / indium selenide heterojunction. Compared with the prior art, black phosphorus and indium selenide are successfully combined by adopting a liquid phase stripping method to form a two-dimensional material heterojunction, and the two materials are combined to avoid the defect of a single material, so that not only is the defect of large saturated absorption light intensity of black phosphorus avoided, but also the defect of relatively low modulation depth of indium selenide is avoided; therefore, the two-dimensional black phosphorus / indium selenide heterojunction obtained through combination is large in modulation depth and low in saturation absorption light intensity, and is suitable for a mode-locked fiber laser.

Description

technical field [0001] The invention relates to the technical field of two-dimensional materials, in particular to a method for preparing a two-dimensional black phosphorus / indium selenide heterojunction. Background technique [0002] Since the birth of the first ruby ​​laser in 1960, the types of saturable absorbers have been continuously improved under the development of short pulse lasers. However, dyes, the initial saturable absorbers, have problems such as perishability and short lifespan. Therefore, the demand for saturable absorbers with better nonlinear absorbability characteristics has become urgent. [0003] With the continuous development of science and technology and the advent of two-dimensional materials, scientists have begun to carry out a series of exploration and research on this type of materials. TMDs, topological insulators, black phosphorus, etc. have been researched one after another and can be widely used in the research of fiber lasers. However, due...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/02C01B19/04H01S3/098
CPCC01B25/02C01B19/007H01S3/1118C01P2004/80C01P2002/85C01P2004/04C01P2004/64
Inventor 肖全兰钟子钧
Owner SHENZHEN UNIV
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