Growth method and growth equipment for high-resistance silicon epitaxial wafer

Abstract

The invention provides a high-resistance silicon epitaxial wafer growth method and growth equipment, and belongs to the technical field of semiconductor device preparation. F plasma processing and N plasma processing are sequentially carried out on the high-resistance silicon substrate, F plasma processes the surface of the high-resistance silicon substrate, on one hand, the F plasma is not prone to permeating into the high-resistance silicon substrate, and the situation that the electrical property of the high-resistance silicon substrate goes wrong is avoided; and on the other hand, the F plasma can enhance the electronegativity of the surface of the high-resistance silicon substrate. In the subsequent N plasma processing process, the N plasma processing and the F plasma processing can form a very compact and insulating protective layer on the surface of the high-resistance silicon substrate. The high-resistance silicon substrate and the manufacturing method thereof have the advantages that Al atoms or Ga atoms in the AlN buffer layer, the GaN epitaxial layer and the PN semiconductor growing subsequently are effectively prevented from being mixed or doped into the high-resistance silicon substrate, the insulation state of the high-resistance silicon substrate is guaranteed, a stray capacitance area of the high-resistance silicon substrate is reduced, and the loss of a radio frequency device introduced in application is reduced.

Description

technical field [0001] The disclosure relates to the technical field of semiconductor device preparation, in particular to a method and equipment for growing a high-resistance silicon epitaxial wafer. Background technique [0002] Power and radio frequency devices are common semiconductor photoelectric conversion devices, which mainly play a role in communication. High-resistance silicon epitaxial wafers are the basic structure used to prepare various power and radio frequency devices. [0003] A high-resistance silicon epitaxial wafer usually includes a high-resistance silicon substrate, an AlN buffer layer, a GaN epitaxial layer and a PN semiconductor stacked in sequence. During the actual growth of high-resistance silicon epitaxial wafers, the Al atoms in the AlN buffer layer tend to expand into the high-resistance silicon substrate, and the Ga atoms in the GaN epitaxial layer also have the problem of eroding the high-resistance silicon substrate, resulting in the final ...

AI Technical Summary

Problems solved by technology

The high-resistance silicon substrate in the semi-conducting state introduces a parasitic capacitance area, which introduces loss in the application of radio frequency devices, limits the application of related devices in the high frequency band, and reduces the versatility of radio frequency devices prepared by high resistance silicon epitaxial wafers

Images