Semiconductor laser and method of making the same

Abstract

The invention relates to a semiconductor laser, comprising a substrate on which a buffer layer, an active layer and an InP layer are epitaxially grown in sequence, and also includes a grating layer. Etching to form a grating, and burying the grating on the etched InP layer to obtain a grating layer; inert gas is introduced before the grating burying; the high refractive index material in the grating layer is the same as the grating burying material, and the inert gas is used as the grating burying material. Low refractive index material in the grating layer. A production method is also provided. In the design of the grating layer of the present invention, inert gas is used as the low refractive index material, so that the refractive index difference of the grating layer material is 10 times or more than that of the traditional design, which greatly improves the coupling coefficient of the grating, thereby improving the coupling efficiency and power efficiency of the laser. The design materials of the grating layer are the same. Compared with the traditional InGaAsP / InP materials, the same material design is easy for epitaxial growth and helps to improve the quality of the epitaxial growth of the grating layer at the interface.

Description

technical field [0001] The invention relates to the technical field of optical communication, in particular to a semiconductor laser and a manufacturing method thereof. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, low cost, and easy mass production, and have broad prospects for development in the fields of optical storage, optical communication, and national defense. With the wider application of semiconductor lasers, the requirements for the performance of semiconductor lasers are also higher and higher, and it has become an important factor limiting the performance of semiconductor lasers. [0003] In traditional semiconductor lasers, the grating layer is composed of two materials, and the coupling coefficient K=A0ΓΔn affects the coupling efficiency of the grating. The rate difference Δn=︱n1- n2︱, A0 is a constant coefficient, and Γ is the light field confinement factor. In a specific laser design, the coupling coeff...

AI Technical Summary

Problems solved by technology

However, the above method of increasing the optical field confinement factor to increase the coupling coefficient of the laser and reduce the loss of the laser has a complex structure and is not conducive to industrial mass production.

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