Preparation method of heterogeneous film substrate and filter
A substrate and thin film technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of acoustic energy reflection, achieve the effect of optimizing frequency offset and broadening application scenarios
Pending Publication Date: 2022-05-06
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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Problems solved by technology
[0004] In view of the above-mentioned problems of the prior art, the application provides a preparation method and filter of a heterogeneous thin film substrate to solve technical problems such as interface acoustic wave energy reflection in the device structure in the prior art
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Embodiment 1
[0066] This embodiment 1 discloses a method for preparing a filter, which comprises the following steps:
[0067] S100: provide a thin film transfer substrate 1 having opposite first and second surfaces. The thin film transfer substrate 1 is a silicon semiconductor material.
[0068] S200: ion implantation is performed on the thin film transfer substrate 1 to form an implantation damage layer 11 in the thin film transfer substrate 1; The direction of ion implantation is from the first surface to the second surface. Wherein, the injection damage layer 11 forms a side close to the first surface inside the film transfer substrate 1.
[0069] In some embodiments, the ions used for ion implantation include at least one of hydrogen ions, helium ions and neon ions.
[0070] The temperature of ion implantation is - 25 to 300 ℃;
[0071] The implantation energy of the ion implantation is 1-2000kev;
[0072] The dose of the ion implantation is 1 × ten 16 -1 × ten 18 cm -2 。
[0073] S300: p...
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The invention relates to a preparation method of a heterogeneous film substrate and a filter. Comprising the steps that a film transfer substrate is provided, and the film transfer substrate is provided with a first surface and a second surface which are opposite; performing ion implantation on the thin film transfer substrate to form an implantation damage layer in the thin film transfer substrate; the ion implantation direction is from the first surface to the second surface; providing a supporting substrate, wherein the supporting substrate is provided with a third surface and a fourth surface which are opposite to each other; bonding the third surface of the supporting substrate with the first surface of the film transfer substrate to obtain a bonded substrate; and carrying out heat treatment on the bonding substrate, and applying deformation limiting pressure of a preset size to the bonding substrate in the heat treatment process, so that the bonding substrate is stripped along the injection damage layer, and the heterogeneous film substrate is obtained. According to the invention, the pressure is limited through the preset deformation, so that the integrity of the transfer film layer is ensured when the bonding substrate is peeled off.
Description
technical field [0001] The invention relates to the field of material preparation technology and RF devices, in particular to a preparation method of heterogeneous thin film substrate and a filter. Background technology [0002] With the increasing pursuit of data transmission speed, performance and power consumption of telecommunications equipment, people need to provide new chip integration schemes to realize chip technology with high performance, high integration and low power consumption. According to the different properties of materials, people have realized chips with different superior properties based on the superior properties of materials themselves. For example, silicon chips with high integration, high-speed and high-frequency gallium arsenide chips, high-power gallium nitride chips and piezoelectric chips are widely used in filters of RF systems. With the rise of piezoelectric thin films, relevant optical and acoustic devices can greatly reduce the size of devices, ...
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IPC IPC(8): H03H3/02H03H3/08
CPCH03H3/02H03H3/08H03H2003/023
Inventor 欧欣李忠旭黄凯
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD