The invention discloses a stackable high-temperature annealing technology. The technology comprises the following specific operation steps that 1, etched
silicon wafers are stacked in order and put into a
quartz sheet frame for annealing; 2, the
silicon wafers on the
quartz sheet frame are covered with a
quartz cover plate and pressed, and the quartz sheet frame is fed into a high-temperature
diffusion-oxidation furnace; 3, annealing is conducted by increasing and stabilizing the temperature of a furnace tube of the high-temperature
diffusion-oxidation furnace; 4, temperature decreasing and discharging from the furnace are conducted, wherein the temperature of the furnace tube of the high-temperature
diffusion-oxidation furnace is decreased, and the quartz sheet frame is discharged from the furnace. The stackable high-temperature annealing technology has the advantages that the surfaces of the stacked
silicon wafers are isolated from air, and therefore the problems existing in a
thermal oxidation technology are effectively solved; operation is easy, the consumed time is short, and quantity production is easy to achieve; meanwhile, the yield is high, the battery piece efficiency is significantly improved, the problems such as edge breakage, corner faults, hidden cracks and fragments in the loading and unloading process of the silicon wafers can be effectively solved, the loading and unloading time is shortened, the quality of battery pieces is improved, and the qualified rate of the battery pieces is increased.