Semiconductor processing equipment and heating method for growth of target object
A technology of processing equipment and heating method, applied in the field of target growth, can solve the problems of low quality of the target, prone to dislocation, unfavorable use, etc., and achieve the effects of speeding up transportation, improving quality, and improving growth speed.
Pending Publication Date: 2022-05-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
[0004] In the prior art, the quality of the target object prepared by the PVT method is not high, and defects such as dislocations and stacking faults are prone to occur, which is not conducive to subsequent use
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[0024] The study found that the main reason for the above problems is that in the existing PVT technology, it is difficult to provide a controllable temperature field for the reaction environment, and the shape of the target growth interface is similar to the isotherm of the interface. If the isotherm at the growth interface If the line is not straight, it will cause unevenness on the growth interface of the target object, resulting in defects.
[0025] There are three types of isotherms. One is that the shape of the isotherm is a straight line, and the straight line is parallel to the growth interface of the target object. The temperature at the center of the center is low, and there is another kind of concave isotherm. The shape of the concave isotherm is that the center bulges upward, and the central temperature of the bulge is high. A convex isotherm produces a convex target interface, a concave isotherm produces a concave target interface, and a flat isotherm produces a f...
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Abstract
The invention discloses semiconductor processing equipment and a heating method for growth of a target object, which can optimize the quality of the prepared target object and reduce defects in the target object. The semiconductor processing equipment comprises a reaction chamber which comprises a first end and a second end which are sequentially arranged in the axial direction of the reaction chamber, and a target object is formed at the first end; the heating module comprises a first heater which is arranged above the first end and is at least provided with a heat radiation surface distributed along the first growth direction of the target object; the second heater is arranged on the first end side face and at least provided with a heat radiation surface distributed in the second growth direction of the target object; the third heater is arranged below the second end and at least provided with a heat radiation surface distributed along the second growth direction of the target object; the fourth heater is arranged on the second end side surface and at least provided with a heat radiation surface distributed along the first growth direction of the target object; and the heating powers of the first heater, the second heater, the third heater and the fourth heater are mutually independent.
Description
technical field [0001] The application relates to the field of object growth, in particular to semiconductor processing equipment and a heating method for object growth. Background technique [0002] When preparing the target object, a physical vapor transport method (PVT, Physical Vapor Transport) and the like can be used. For example, when preparing silicon carbide (SiC), SiC crystals with higher purity can be obtained by using the PVT method. [0003] SiC belongs to the third-generation semiconductor material, which has the characteristics of wide bandgap, high thermal conductivity, high critical breakdown field, and high electron saturation drift rate. It is a popular material for preparing high-temperature, high-frequency, and high-power devices. It is used in electric vehicles, High-speed rail, communications, aerospace and other fields have broad prospects. [0004] In the prior art, the quality of the target object prepared by the PVT method is not high, and defect...
Claims
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IPC IPC(8): C30B29/36C30B23/00C30B28/12
CPCC30B29/36C30B23/00C30B23/002C30B28/12
Inventor 崔殿鹏
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD