Nonvolatile memory device and method of programming in nonvolatile memory
A non-volatile, memory technology, applied in the direction of static memory, read-only memory, digital memory information, etc., can solve the problem of increased interference of unselected memory cells, achieve the effect of reducing passing interference and improving boosting efficiency
Pending Publication Date: 2022-05-13
SAMSUNG ELECTRONICS CO LTD
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- Description
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- Application Information
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Problems solved by technology
As integration and / or memory capacity increases, disturbance from unselected memory cells may increase during programming of selected memory cells
Method used
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Embodiment Construction
[0039] Various example embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some example embodiments are shown.
[0040] figure 1 is a flowchart illustrating a method of programming in a non-volatile memory device according to some example embodiments.
[0041] figure 1A method of programming in a non-volatile memory device including at least one memory block including a plurality of cell strings, wherein each cell string includes a A string select transistor, a plurality of memory cells, and a ground select transistor. According to some example embodiments, the nonvolatile memory device may include a three-dimensional NAND flash memory device and / or a vertical NAND flash memory device.
[0042] refer to figure 1 , during a bit line setup period of a program loop, channels of a plurality of cell strings are precharged to a first voltage (operation S110). In general, channels of a cell string may be precharged by a set ...
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A non-volatile memory device includes at least one memory block and a control circuit. The at least one memory block includes a plurality of cell strings, each cell string including a string selection transistor, a plurality of memory cells, and a ground selection transistor. The control circuit controls a program operation by: pre-charging channels of the plurality of cell strings to a first voltage during a bit line setting period of a program loop; applying a program voltage to selected word lines of the plurality of cell strings during a program execution period of the program loop; and recovering the voltages of the selected word lines and the unselected word lines of the plurality of cell strings to a second voltage greater than the ground voltage during a recovery period of the program cycle after recovering the voltages of the selected word lines and the unselected word lines to a negative voltage less than the ground voltage.
Description
[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2020-0139081 filed in the Korean Intellectual Property Office on October 26, 2020, the disclosure of which is incorporated herein by reference in its entirety. Background technique [0003] Example embodiments relate generally to semiconductor memory devices, and more particularly to non-volatile memory devices and / or methods of programming in non-volatile memory devices. [0004] Semiconductor memory devices for storing data can be classified into volatile memory devices and nonvolatile memory devices. Volatile memory devices, such as Dynamic Random Access Memory (DRAM) devices, are typically configured to store data by charging or discharging capacitors in memory cells, and the stored data may be lost when power is turned off / disabled. Non-volatile memory devices, such as flash memory devices, can retain stored data even when power is turned off. ...
Claims
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Login to View More IPC IPC(8): G11C16/12G11C16/34
CPCG11C16/12G11C16/3404G11C16/3431G11C16/10G11C16/0483G11C16/08G11C16/3418G11C16/3459G11C16/24G11C16/30G11C8/10G11C16/3427H01L24/08H01L25/0657H01L25/18H01L2224/08145H01L2924/1431H01L2924/14511H10B41/27H10B43/27
Inventor 崔容赫南尚完柳载德李耀翰
Owner SAMSUNG ELECTRONICS CO LTD