Semiconductor manufacturing method and process chamber
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of limited effect of cleaning production efficiency and affecting the performance of semiconductor devices, so as to improve cleaning production efficiency and reduce output Effect
Pending Publication Date: 2022-05-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology
[0002] In order to form the structure of the semiconductor device on the wafer, it is necessary to clean the surface of the wafer using a dry cleaning process, but by-products will be produced during cleaning, which will affect the performance of the semiconductor device
[0003] At present, the method of changing the pressure is used to remove the by-products in the cleaning process, but this method has limited effect on improving the cleaning production efficiency
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[0031] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0032] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufactur...
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Abstract
According to the semiconductor manufacturing method and the process chamber, the reaction pressure in the chamber is controlled to be within the first pressure range in the etching process, and the surface temperature of the wafer is synchronously controlled to be reduced to be within the first temperature range so as to improve the reactivity and the selection ratio, reduce the output of byproducts and improve the yield of the semiconductor. And in the cleaning process, the reaction pressure in the chamber is controlled to be reduced to a second pressure range from the first pressure, and the surface temperature of the wafer is synchronously controlled to be increased to a second temperature range from the first temperature range so as to accelerate the removal speed of byproducts. And repeatedly executing the etching process and the cleaning process until the target etching amount is reached. According to the method disclosed by the invention, the byproducts are subjected to targeted treatment from two aspects of improving reactivity and selection ratio and increasing the removal speed of the byproducts, so that the byproducts generated in the cleaning process can be effectively removed, and the cleaning production efficiency can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor device processing, in particular to a semiconductor manufacturing method and a process chamber. Background technique [0002] In order to form the structure of the semiconductor device on the wafer, it is necessary to clean the surface of the wafer using a dry cleaning process, but by-products will be produced during cleaning, which will affect the performance of the semiconductor device. [0003] At present, the method of changing the pressure is used to remove the by-products in the cleaning process, but this method has a limited effect on improving the cleaning production efficiency. Contents of the invention [0004] In view of the above problems, the present invention is proposed to provide a semiconductor manufacturing method and a process chamber that overcome the above problems or at least partially solve the above problems. [0005] On the one hand, the present application provid...
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IPC IPC(8): H01L21/02H01L21/3065H01L21/67
CPCH01L21/3065H01L21/0201H01L21/02057H01L21/02082H01L21/67069
Inventor 姜喆求高建峰刘卫兵白国斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI