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A shielded gate device with temperature sampling function

A technology of shielding grids and devices, which is applied in thermometers, electric solid devices, semiconductor devices, etc., can solve problems such as temperature monitoring delays and power device burnouts, and achieve the effects of reducing volume, saving costs, and avoiding burnouts

Active Publication Date: 2022-06-17
VANGUARD SEMICON CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the defect that the temperature sampling device is arranged on the surface of the power device in the prior art, causing a delay in temperature monitoring and thus easily causing the power device to burn out, thereby providing a shielding grid device with a temperature sampling function

Method used

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  • A shielded gate device with temperature sampling function
  • A shielded gate device with temperature sampling function
  • A shielded gate device with temperature sampling function

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Embodiment 1

[0036] refer to figure 1 as well as figure 2 As shown, a shielded gate device with temperature sampling function, the cell area of ​​the device includes a plurality of regular cells 7 and a plurality of sampling cells 8, and the regular cells 7 and the sampling cells 8 include: N type substrate 1, weak N-type epitaxial layer 2, oxide layer 3, P-type polysilicon 4, N-type polysilicon 5 and P-type base region 6; the epitaxial layer 2 is located above the substrate 1; the A part of the oxide layer 3 is located inside the epitaxial layer 2, and the top is higher than the top of the epitaxial layer 2; the base region 6 is located on both sides of the oxide layer 3 above the epitaxial layer 2; the P-type polysilicon 4 and N-type polysilicon 5 are located inside the oxide layer 3, and the P-type polysilicon 4 is located above the N-type polysilicon 5; the P-type polysilicon 4 and the N-type polysilicon 5 of the conventional cell 7 are separated, respectively. A control gate and a ...

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Abstract

The invention belongs to the technical field of semiconductor devices, and specifically relates to a shielded gate device with a temperature sampling function. The cell area of ​​the device includes a plurality of conventional cells and a plurality of sampling cells. According to the negative temperature characteristic of the forward voltage drop of the diode, the polysilicon PN junction diode is used as a temperature sensor to monitor the temperature change of the shielded gate device in real time. Since the sampling cell is integrated with the conventional cell, the internal temperature of the shielded gate device can be better monitored, so that it can be detected in time when overheating occurs, and the device is prevented from being burned. At the same time, because the structure of the sampling cell is fine-tuned relative to the conventional cell, the sampling cell is compatible with the conventional cell process, and the same process steps of sampling are completed, which will not increase the difficulty of the process too much and save costs.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a shielded gate device with a temperature sampling function. Background technique [0002] As a power semiconductor device, the shielded gate device needs to be used in a high-power environment, and the device is easily overheated and burned. Therefore, it is necessary to design a temperature sampling circuit for the shielded gate device, monitor the temperature of the power device in real time, and output the temperature signal to the protection circuit to control the operation of the power device and play the role of over-temperature protection. [0003] In the prior art, the temperature sampling device is often arranged on the surface of the power device. Since the position where the power device generates the most heat is usually located at the highest electric field inside the device, the temperature sampling device located on the surface of the power device ha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L29/06G01K7/01
CPCH01L22/34H01L29/0696H01L29/0684G01K7/01
Inventor 李伟聪姜春亮雷秀芳林泳浩
Owner VANGUARD SEMICON CORP
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