Plasma processing apparatus

Abstract

The plasma processing device comprises a reaction cavity which comprises a reaction cavity side wall, the reaction cavity side wall is provided with a substrate transmission port, and a first distance exists between the top of the substrate transmission port and the bottom of the reaction cavity; the movable lower electrode assembly is arranged at the bottom in the reaction cavity and is used for bearing a substrate to be treated; the plasma confinement device is arranged around the periphery of the movable lower electrode assembly, a second distance exists between the bottom of the plasma confinement device and the bottom of the reaction cavity, and the second distance is larger than the first distance; the shielding plate is positioned between the movable lower electrode assembly and the side wall of the reaction cavity and is used for sealing the substrate transmission port; and the first driving device is used for driving the baffle plate to move so as to seal the substrate transmission port. According to the plasma processing device, particle pollution can be reduced, the smoothness of a substrate conveying path can be ensured, and the etching uniformity of the substrate to be processed at different phase angles can be improved.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a plasma processing device. Background technique [0002] Among various processes in the manufacture of semiconductor devices, plasma treatment is a key process for processing the substrate to be treated into a design pattern. In a typical plasma processing process, the process gas is excited by a radio frequency (RF) to form a plasma. These plasmas undergo physical bombardment and chemical reaction with the surface of the substrate to be processed after the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so as to process the surface of the substrate to be processed. [0003] Usually, a substrate transfer port is provided on the side wall of the reaction chamber of the plasma processing apparatus, and the substrate transfer port is used to realize the transfer or transfer of the substrate to be processed. Howev...

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Problems solved by technology

[0003] Usually, the substrate transfer port is provided on the side wall of the reaction chamber of the plasma processing device, and the substrate transfer port is used to realize the transfer in or transfer of the substrate to be processed. However, the side wall of the reaction chamber is easy to accumulate particle pollutants. , when the substrate is transported, the accumulated particle pollutants fall on the surface of the substrate to be processed, which will cause contamination of the substrate to be processed and affect the yield of the substrate to be processed

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