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Laser crystallization device and thin film transistor substrate

A laser crystallization and substrate technology, which is applied in laser welding equipment, electric solid state devices, semiconductor devices, etc., and can solve the problems of different scanning directions.

Pending Publication Date: 2022-06-03
SAMSUNG DISPLAY CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, since the laser beam used in solid-state laser crystallization has relatively high linear polarization, there is a case where the crystal grain size of the polysilicon layer is larger than the interval between protrusions formed on the polysilicon layer or the arrangement direction of the protrusions is different from that of the laser beam. Problems with different scan directions of the beam

Method used

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  • Laser crystallization device and thin film transistor substrate
  • Laser crystallization device and thin film transistor substrate
  • Laser crystallization device and thin film transistor substrate

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Embodiment Construction

[0050] Hereinafter, the laser crystallization apparatus, the laser crystallization method and the thin film transistor substrate according to the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same or similar reference numerals are used for the same constituent elements on the drawings.

[0051] Below, refer to Figure 1 to Figure 6 The laser crystallization apparatus and the laser crystallization method according to the embodiments of the present invention will be described.

[0052] figure 1 is a diagram showing a laser crystallization apparatus according to an embodiment of the present invention.

[0053] refer to figure 1 , the laser crystallization apparatus may include a light source 100 , an optical system 200 and a platform 300 . The light source 100 may generate the laser beam LB. The optical system 200 can perform optical conversion on the laser beam LB transmitted from the light source 100 ...

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Abstract

The invention discloses a laser crystallization apparatus and a thin film transistor substrate. The laser crystallization device comprises a light source which emits first incident light and second incident light; a polarization angle adjustment unit that adjusts the polarization angle of the first incident light and the polarization angle of the second incident light and emits first emergent light and second emergent light; and a stage supporting the substrate irradiated by the laser beam including the first emission light and the second emission light, in which a polarization angle of the first emission light and a polarization angle of the second emission light may be symmetrical.

Description

technical field [0001] The invention relates to a laser crystallization device. In more detail, the present invention relates to a laser crystallization apparatus for crystallizing amorphous silicon, a laser crystallization method using the laser crystallization apparatus, and a thin film transistor substrate manufactured using the laser crystallization method. Background technique [0002] The display device may include a thin film transistor substrate including a thin film transistor. The thin film transistor may include a semiconductor layer including amorphous silicon, polycrystalline silicon, oxide semiconductor, or the like. In particular, since the thin film transistor including the polysilicon layer has relatively high electron mobility, the thin film transistor including the polysilicon layer is widely used. [0003] The polysilicon layer may be formed by crystallizing an amorphous silicon layer. For the crystallization of the amorphous silicon layer, thermal cry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/67H01L27/12
CPCH01L21/268H01L21/67115H01L27/1222H01L27/1285H01L21/02675H01L21/02595H01L21/02532H01L29/78675H01L27/1274B23K26/354
Inventor 奥村展郑在祐姜旻炅苏炳洙
Owner SAMSUNG DISPLAY CO LTD