Non-uniform magnetization memory cell

A memory unit and consistent technology, applied in the field of memory, can solve the problems of large storage unit area and high cost

Pending Publication Date: 2022-06-07
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a storage unit with non-uniform magnetization to so

Method used

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  • Non-uniform magnetization memory cell
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Embodiment Construction

[0024] It should be noted that the embodiments of the present invention and the features of the embodiments may be combined with each other under the condition of no conflict. The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0025] In order to make those skilled in the art better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments are part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0026] It should be noted th...

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Abstract

The invention provides a memory cell with non-uniform magnetization. The memory cell comprises a spin Hall effect layer and two parallel magnetic tunnel junctions located on the surface of the same side of the spin Hall effect layer, each magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are sequentially stacked in the direction away from the spin Hall effect layer, and the two reference layers have fixed magnetization directions. The two magnetic tunnel junctions have different shapes, or the two magnetic tunnel junctions have the same shape and have different arrangement modes on the spin Hall effect layer, so that the slopes of easy magnetization axes of the two magnetic tunnel junctions are opposite in positive and negative directions, and the two free layers show opposite magnetization directions after the spin Hall effect layer is electrified. After the free layers in the two magnetic tunnel junctions are electrified, an external magnetic field is not needed, and the two magnetic tunnel junctions are always in a complementary resistance state and read signals to realize differential storage through currents in different directions, so that the area of a storage unit can be saved, and the cost is reduced.

Description

technical field [0001] The present invention relates to the technical field of memory, and in particular, to a non-uniformly magnetized storage unit. Background technique [0002] Spin-orbit torque magnetic memory (SOT-MRAM) is one of the more promising memory devices in the future because of its high write speed and low power consumption. [0003] The SOT-MRAM device unit consists of a magnetic tunnel junction (MTJ) and a spin Hall effect layer (SHE). MTJ includes a free layer, a barrier layer, and a reference layer. The magnetization direction of the reference layer is fixed, and the magnetization direction of the free layer is variable. When the free layer and the reference layer are parallel, the MTJ exhibits a low resistance state; when the free layer and the reference layer are antiparallel, the MTJ exhibits a high resistance state. When the current flows through the spin Hall effect layer, the magnetic moment of the free layer is reversed by the assistance of an ex...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/1673G11C11/1675G11C11/16
Inventor 李州孟皓
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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