Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof, and the semiconductor structure comprises a substrate which is provided with a plurality of grooves and active regions, and a plurality of bit lines which are arranged on a storage unit region at equal intervals along a first direction and extend towards a second direction orthogonal to the first direction, the bit lines are electrically connected to an active region in the substrate through a groove, the dummy bit line is located on the outermost side of the bit lines in the first direction and extends towards the second direction, the width of the dummy bit line in the first direction is larger than that of the bit lines in the first direction, and the width of the dummy bit line in the second direction is larger than that of the bit lines in the second direction. The bottoms of the dummy bit lines are not in the same horizontal plane, and the dummy bit lines and the bit lines have the same composition and layer structure.

Description

technical field [0001] Embodiments disclosed in the present invention relate to a semiconductor structure and a fabrication method thereof, and more particularly, to a semiconductor structure having bit lines of different widths and a fabrication method thereof. Background technique [0002] A memory device is an integrated circuit typically used in computer systems to store data, fabricated as one or more arrays of individual memory cells. Memory devices can use bit lines (also known as digit lines, data lines, or read lines) and word lines (also known as access lines) for write and read operations, where the bit lines can be along a matrix The columns of the matrix are electrically connected to the memory cells, and the word lines may be electrically connected to the memory cells along the columns of the matrix. Each memory cell is individually addressable via a combination of a bit line and a word line. [0003] Memory devices may be volatile, semi-volatile or non-volat...

AI Technical Summary

Problems solved by technology

However, with the continuous shrinking of memory devices, there are many problems to be overcome in its manufacturing process, such as the micro-load effect caused by different pattern densities, or the problem of insufficient layout space caused by too close components

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