Memory device and forming method thereof

Abstract

A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over a substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Further, at least one moisture barrier layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture barrier layer comprises an amorphous material.

Description

technical field [0001] Embodiments of the present invention relate to memory devices and methods of forming the same. Background technique [0002] Memory devices are used in integrated circuits for electronic applications including, for example, radios, televisions, mobile phones, and personal computing devices. Phase Change Random Access Memory (PCRAM) is a type of non-volatile random access computer memory. PCRAM technology is based on materials that can be either amorphous or crystalline at normal ambient temperatures. When the material is in an amorphous state, the material has a high electrical resistance. When the material is in a crystalline state, the material has low resistance. PCRAM devices offer a variety of operational and engineering advantages, including high speed, low power, non-volatility, high density, and low cost. While existing PCRAM devices are generally adequate for their intended use, as devices continue to shrink, they are not entirely satisfac...

AI Technical Summary

Problems solved by technology

While existing PCRAM devices are generally adequate for their intended use, they are not entirely satisfactory in all respects as devices continue to shrink

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