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Vertical field effect transistor and method for constructing same

A vertical field effect and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty in electrical connection

Pending Publication Date: 2022-06-24
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the thin semiconductor fins make it difficult to make electrical contact with the front side metallization with low resistance

Method used

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  • Vertical field effect transistor and method for constructing same
  • Vertical field effect transistor and method for constructing same
  • Vertical field effect transistor and method for constructing same

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Embodiment Construction

[0015] In the following detailed description, reference is made to the accompanying drawings, which form part of this specification, and in which specific embodiments are shown for The invention may be practiced in the specific embodiments described. It goes without saying that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It goes without saying that the features of the different embodiments described here can be combined with each other, unless specifically stated otherwise. Therefore, the following detailed description should not be construed in a limiting sense, and the protection scope of the present invention is defined by the appended claims. In the figures, identical or similar elements are provided with the same reference numerals, as long as this serves the purpose.

[0016] figure 2 A schematic cross-sectional view of a vertical field effect transistor 200 according to va...

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Abstract

A vertical field effect transistor (200, 300, 400, 500, 600) is provided having a drift region (204); the semiconductor device comprises a drift region (204), a semiconductor fin (230) on or above the drift region, and a connection end region (212) on or above the semiconductor fin (230), a gate electrode (220) formed next to at least one side wall of the semiconductor fin (230), the semiconductor fin (230) has a smaller lateral extension in a first section (208) arranged laterally next to the gate electrode (220) than in a second section (206) contacting the drift region (204) and / or in a third section (210) contacting the connection end region (212).

Description

technical field [0001] The present invention relates to a vertical field effect transistor and a method for constructing the same. Background technique [0002] In the automotive sector, solutions for fast and lossless switching of power semiconductors are favored with the progress towards electric vehicles. Here, the synchronizing trend from lateral members to vertical members and established in recent decades towards so-called "wide-band-gap" materials (ie, semiconductor materials with a wide band gap, such as silicon carbide ( Trends in silicon technology such as SiC) or gallium nitride (GaN) have led to the development of new component concepts and manufacturing processes. [0003] For the application of semiconductors with wide band gaps, the use of so-called power FinFETs (Fin=Finne, fin, FET=Feldeffekttransistor, field effect transistor) can be advantageous. In a conventional MOSFET or MISFET, the active switchable component is provided by an inverted channel, eg by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/08H01L29/78H01L21/336
CPCH01L29/1608H01L29/2003H01L29/7828H01L29/66666H01L29/0847H01L29/66068H01L29/0619H01L29/0657H01L29/063H01L29/66522
Inventor D·斯霍尔滕J·巴林豪斯D·克雷布斯
Owner ROBERT BOSCH GMBH