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Band-gap reference core circuit, band-gap reference source and semiconductor memory

A core circuit and reference voltage technology, applied in instruments, regulating electrical variables, control/regulating systems, etc., can solve problems such as non-adjustable reference voltage, limited use range, current mirror matching error, etc., to expand the scope and expand the scope of use. Effect

Pending Publication Date: 2022-06-28
CHANGXIN MEMORY TECH INC
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Problems solved by technology

[0003] The traditional bandgap reference source has an unadjustable output reference voltage, which limits its application range; moreover, there is a matching error in its current mirror, which affects its performance

Method used

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  • Band-gap reference core circuit, band-gap reference source and semiconductor memory
  • Band-gap reference core circuit, band-gap reference source and semiconductor memory
  • Band-gap reference core circuit, band-gap reference source and semiconductor memory

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Embodiment Construction

[0056] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the technical solutions of the present disclosure will be further elaborated below with reference to the accompanying drawings and embodiments. The described embodiments should not be regarded as limitations of the present disclosure. All other embodiments obtained under the premise of not making creative efforts fall within the protection scope of the present disclosure.

[0057] In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is understood that "some embodiments" can be the same or a different subset of all possible embodiments, and Can be combined with each other without conflict.

[0058]If a similar description of "first / second" appears in the application documents, the following description will be added. In the following description, the term "first / second / third" involved is only to d...

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Abstract

The invention provides a band-gap reference core circuit, a band-gap reference source and a semiconductor memory. The band-gap reference core circuit comprises a generating unit, a first voltage dividing unit and a second voltage dividing unit. Wherein the generation unit is used for generating a positive temperature coefficient voltage and a negative temperature coefficient voltage; and obtaining a positive temperature coefficient current and a negative temperature coefficient current based on the positive temperature coefficient voltage and the negative temperature coefficient voltage. And the first voltage division unit is connected with the generation unit and the second voltage division unit and is used for generating initial current based on the positive temperature coefficient current and the negative temperature coefficient current. The second voltage dividing unit is used for determining a reference voltage based on the initial current; the first voltage dividing unit and the second voltage dividing unit influence the voltage dividing proportion of the reference voltage; the reference voltage has a first-order zero temperature drift coefficient. The output reference voltage can be adjusted, and the application range is expanded.

Description

technical field [0001] The present disclosure relates to, but is not limited to, a bandgap reference core circuit, a bandgap reference source and a semiconductor memory. Background technique [0002] Bandgap voltage reference (Bandgap voltage reference), often referred to as Bandgap, is to use a voltage with a positive temperature coefficient and a voltage with a negative temperature coefficient to add in a certain proportion, so that the temperature coefficients of the two cancel each other out, and obtain a temperature-independent reference. voltage, about 1.25V. Because this reference voltage is similar to the bandgap voltage of silicon, it is called a bandgap reference. [0003] The output reference voltage of the traditional bandgap reference source is not adjustable, which limits its application range; moreover, its current mirror has a matching error, which affects its performance. SUMMARY OF THE INVENTION [0004] In view of this, the embodiments of the present d...

Claims

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Application Information

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IPC IPC(8): G05F1/625
CPCG05F1/625G05F3/265G05F1/567G05F3/245G05F3/30
Inventor 程伟杰罗元钧
Owner CHANGXIN MEMORY TECH INC
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