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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems affecting chip performance, chip rejection, and lower production yield, so as to reduce glue overflow Phenomenon, reduce the probability of rejection, improve the effect of production yield

Pending Publication Date: 2022-07-05
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, during the process of injecting the molding compound, the molding compound may overflow, affecting the performance of the chip, resulting in rejection of the chip after packaging, and reducing the production yield

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0136] Figures 4a to 4f A method for fabricating a conductive structure is shown according to an exemplary embodiment. refer to Figures 4a to 4f As shown, the method includes at least the following steps:

[0137] Step 1: Refer to Figure 4a As shown, at least two layers of conductive material 202' are formed on the substrate 201. Here, the substrate 201 and the conductive material layer 202' are sequentially stacked along the z direction. The cutting area is located between two adjacent conductive material layers 202'.

[0138] Step 2: Refer to Figure 4b As shown, a photosensitive layer 206' is formed covering at least two layers of conductive material 202' and the dicing area. Here, the substrate 201, the conductive material layer 202' and the photosensitive layer 206' are sequentially stacked along the z direction.

[0139] Step 3: Refer to Figure 4c shown, by exposure and development in the z-direction, a Figure 4d The patterned photosensitive ...

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Abstract

The embodiment of the invention discloses a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate which comprises an injection molding region and a cutting region; wherein the injection molding area extends in the first direction, and the cutting area extends in the second direction; the cutting area comprises a first area and a second area; wherein the first area is overlapped with the injection molding area; the second area is not overlapped with the injection molding area; the at least two conductive structures are positioned on the substrate and are arranged in parallel along the first direction; wherein the cutting area is located between the two adjacent conductive structures; the injection molding area and the conductive structure are arranged in parallel along the second direction; the blocking structure is located at the junction of the first area and the second area; wherein the height of the blocking structure is basically the same as that of the conductive structure; in the first direction, the width of the blocking structure is larger than or equal to the width of the cutting area.

Description

technical field [0001] Embodiments of the present disclosure relate to the technical field of semiconductors, and in particular, to a semiconductor device and a method for fabricating the same. Background technique [0002] In the field of semiconductor packaging, injection molding packaging is widely used due to its advantages of low cost and simple process. By injecting the plastic sealing compound into the mold cavity, the chip on the packaging substrate can be plastic-sealed, and the cooled plastic sealing compound is combined with the packaging substrate to form protection for the chip. [0003] However, in the process of injecting the molding compound, the molding compound may overflow, which affects the performance of the chip, causes the chip to be rejected after the package, and reduces the manufacturing yield. SUMMARY OF THE INVENTION [0004] According to a first aspect of the embodiments of the present disclosure, there is provided a semiconductor device, comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L21/48H01L21/56
CPCH01L23/49838H01L21/4846H01L21/56
Inventor 唐燕菲
Owner CHANGXIN MEMORY TECH INC
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