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High-speed signal TO-CAN structure

A TO-CAN, high-speed signal technology, applied in the field of high-speed signal TO-CAN structure, can solve problems such as power consumption, achieve the effects of reducing signal distortion, increasing impedance matching design, and reducing material costs

Pending Publication Date: 2022-07-05
GUANGXUN SCI & TECH WUHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in the embodiments of the present invention is to reduce signal distortion by adding TEC temperature control mode and adopting impedance matching mode, but adding impedance matching will introduce ineffective power consumption

Method used

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  • High-speed signal TO-CAN structure

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Embodiment 1

[0041] Embodiment 1 of the present invention provides that the present invention provides a high-speed signal TO-CAN structure, such as figure 1 and figure 2 shown, including TO base 1 and laser chip 2, specifically:

[0042] The TO base 1 is provided with two laser high-frequency signal pins (in figure 2 Marked as 11 and 12), respectively for establishing electrical connection with one end of the matching resistor 3 and one end of the laser chip 2; wherein, the other end of the matching resistor 3 is interconnected with the other end of the laser chip 2;

[0043] The two ends of the laser chip 2 are also respectively connected with the two laser static working pins on the TO base 1 (in figure 2 marked as 13 and 14) in the connection.

[0044] The matching resistor 3 is used to adapt the signal source of the high-frequency signal, the transmission impedance between the high-frequency signal source and the laser, and the balance between the high-frequency impedance of the...

Embodiment 2

[0060] The technical solution of the embodiment of the present invention is a high-speed signal light-emitting TO with matching resistance to improve power consumption. Compared with Embodiment 1, the embodiment of the present invention presents the content of the solution with a relatively complete structural example.

[0061] The embodiment TO of the present invention consists of a TO base 1, a laser chip 2, a matching resistor 3, a TEC4, a backlight monitoring PD chip 5, a thermistor 6, a ceramic plate 7 carrying the matching resistor 3 and high-speed signal lines, and a tungsten copper block 8 , Aspheric lens cap 9. The laser chip 2 is welded to the ceramic board 7 with matching resistors and high-speed signal lines by eutectic welding, and the backlight monitoring PD chip 5 is bonded to the ceramic board 7 with matching resistors and high-speed signal lines through conductive glue. The ceramic board 7 and the thermistor 6 of the laser chip 2 and the backlight monitoring P...

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Abstract

The invention relates to the technical field of optical communication devices, and provides a high-speed signal TO-CAN structure. Which comprises a TO base and a laser, and is characterized in that two laser high-frequency signal pins are arranged on the TO base and are respectively used for establishing electrical connection with one end of a matched resistor and one end of the laser; wherein the other end of the matched resistor is interconnected with the other end of the laser; and the two ends of the laser are respectively connected with two laser static working pins on the TO base. A modulation signal line and a bias signal line are separated, a matched resistor is additionally arranged on the modulated high-speed signal line to keep the integrity of signals, the matched resistor does not pass through the bias line, and therefore power consumption increase caused by the matched resistor is avoided. The internal space of the existing TO is utilized to the greatest extent to complete the integrity processing of the signal.

Description

【Technical field】 [0001] The invention relates to the technical field of optical communication devices, in particular to a high-speed signal TO-CAN structure. 【Background technique】 [0002] The existing DML modulation mode laser TO is mainly an uncooled solution, and the DML direct modulation mode is cheap and easy to obtain. The chip mainly used in the DML modulation method is the DFB chip. The internal resistance of the DFB chip is generally much lower than the impedance of the transmission signal line, and the phenomenon of impedance mismatch occurs. Without temperature control, it cannot meet the harsher external environmental conditions. [0003] The current method to solve these problems is mainly to increase the TEC temperature control method and use the impedance matching method to reduce the signal distortion phenomenon, but increasing the impedance matching will introduce ineffective power consumption. [0004] In view of this, overcoming the defects of the prio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02212H01S5/0233H01S5/0239H01S5/024H04B10/50
CPCH01S5/02212H01S5/0239H01S5/0233H01S5/02415H04B10/503H04B10/504
Inventor 伍斌阮扬
Owner GUANGXUN SCI & TECH WUHAN
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