Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-performance filter integrating passive device and acoustic mechanical wave device

A technology that integrates passive components and mechanical waves, applied in the field of filters, can solve the problems of large FABR components and low filter performance, and achieve the effects of saving space, low insertion loss, and strengthening the suppression of spurious harmonics

Pending Publication Date: 2022-07-12
XWAVE TECH (SHANGHAI) CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods make up for the shortcomings of the cavity bulk acoustic wave filter to a certain extent, but there are still problems with the large size of the FABR device package and low filter performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance filter integrating passive device and acoustic mechanical wave device
  • High-performance filter integrating passive device and acoustic mechanical wave device
  • High-performance filter integrating passive device and acoustic mechanical wave device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Take the N41 filter as an example:

[0029] The corresponding N41 frequency band FBAR filter is prepared by MEMS processing technology, which is used to form a narrow-band filter with low insertion loss and high square coefficient. like figure 2 shown. The traditional FBAR device is combined with the substrate to design the suppression outside the passband, and the suppression depth outside the passband is realized by the increase of the FBAR cascade technology or the increase of the area ratio of the parallel / series resonator. This way will increase the area of ​​the FBAR chip.

[0030] In the present invention, very few series of FBAR devices are used to realize the performance of low insertion loss and high out-of-band suppression. Some of the wiring and inductance wiring can be concentrated on the cap layer and RDL layer of the FBAR device, which can save the space of the substrate. The specific implementation can be to form the FBAR device on the original subs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-performance filter integrating combination of a passive device and an acoustic mechanical wave device, and relates to the technical field of filters, the high-performance filter comprises a substrate, an FBAR device and an IPD device, the FBAR device comprises a cap layer and an RDL layer, the FBAR device and the IPD device are integrated and assembled on the substrate, and the cap layer and the RDL layer are arranged on the substrate. The integration mode of the FBAR device and the IPD device comprises one of the modes that partial wiring and inductance wiring are concentrated in a cap layer and an RDL layer of the FBAR device or the IPD device is integrated in the cap layer of the FBAR device. According to the invention, the cascade stage number of the FBAR can be greatly reduced, the size of the FABR device is reduced, and the overall heat dissipation effect is relatively improved (the power capacity is improved) and the suppression of parasitic harmonics is enhanced in combination with the IPD device. Products with different frequency bands, different bandwidths, low insertion loss, high rectangular coefficient, high power and high harmonic suppression can be flexibly realized, and the device is suitable for popularization and application.

Description

technical field [0001] The present invention relates to the technical field of filters, in particular to a high-performance filter combining an integrated passive device and an acoustic mechanical wave device. Background technique [0002] In recent years, the share of radio frequency acoustic wave duplex filters in the communication market has grown rapidly, including the rapid improvement of surface acoustic wave (SAW) devices and thin film bulk acoustic wave (FBAR) technologies; The requirements are also getting higher and higher, and the requirements of large bandwidth, high power and high frequency have brought great challenges to acoustic wave devices. Not only low insertion loss and high square coefficient performance of the filter are required, but also high requirements for linearity, mainly for harmonic suppression and intermodulation distortion, especially for the filter part of the transmitter. [0003] Thin-film bulk acoustic wave (FBAR) filters are processed b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H1/00H01L25/16
CPCH03H1/00H01L25/16H03H2001/0021
Inventor 代文亮陈立均赵佳豪林巍
Owner XWAVE TECH (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com