Two-dimensional perovskite material, preparation method thereof and solar cell

A technology of perovskite materials and perovskite precursors, applied in the field of solar cells, can solve problems such as the difficulty in the industrial preparation of two-dimensional perovskite thin films, and achieve simple and controllable preparation method conditions, stable photoelectric conversion efficiency, and cost-effectiveness. good film effect

Active Publication Date: 2022-07-15
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the control of crystal orientation requires more precise experimental conditions, which is difficult to apply to the industrial preparation of two-dimensional perovskite thin films.

Method used

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  • Two-dimensional perovskite material, preparation method thereof and solar cell
  • Two-dimensional perovskite material, preparation method thereof and solar cell
  • Two-dimensional perovskite material, preparation method thereof and solar cell

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preparation example Construction

[0039] The present invention also provides a method for preparing the above-mentioned two-dimensional perovskite material, including:

[0040]S1, the first precursor, the second precursor and the third precursor are dissolved in a solvent, and mixed to obtain a perovskite precursor solution, wherein the first precursor is a metal halide, and the second precursor is a metal halide. is an organic ammonium salt, and the structural formula of the third precursor is shown in the following formula (2),

[0041]

[0042] where R 1 is a straight-chain or branched alkyl group with 2-20 carbon atoms;

[0043] S2, providing a substrate, coating the perovskite precursor solution on the substrate and annealing to obtain a two-dimensional perovskite material.

[0044] In step S1, the metal halide includes PbCl 2 , PbBr 2 , PbI 2 , SnCl 2 , SnBr 2 , SnI 2 , GeCl 2 , GeBr 2 , GeI 2 At least one of, preferably PbI 2 ; the organic ammonium salt includes CH 3 NH 3 I(MAI), NH 2 ...

Embodiment 1

[0073] The etched ITO conductive glass substrate was ultrasonically cleaned with a cleaning agent, deionized water, acetone and isopropanol for 20 min respectively, and then placed in an oven to dry to obtain a transparent conductive layer.

[0074] The dried transparent conductive layer was subjected to ultraviolet ozone treatment for 30 min, and the PEDOT:PSS solution was spin-coated at 3000 rpm for 30 s, and then annealed at 150° C. for 10 min to form a hole transport layer.

[0075] the PbI 2 , CH 3 NH 3 I. DPP-2T was dissolved in DMF:DMSO (v / v 4:1) solvent according to the molar ratio (n:n-1:1, n=4), stirred at 60°C for 4 hours, and mixed to obtain perovskite Precursor solution, the concentration of the precursor solution is 0.8mol / L. in N 2 In an atmospheric glove box, 100 μL of the perovskite precursor solution was dropped on the hole transport layer and quickly spin-coated at 6000 rpm for 30 s to form a thin film, which was then annealed on a heating table at 100 °...

Embodiment 2

[0079]The etched ITO conductive glass substrate was ultrasonically cleaned with a cleaning agent, deionized water, acetone and isopropanol for 20 min respectively, and then placed in an oven to dry to obtain a transparent conductive layer.

[0080] The dried transparent conductive layer was subjected to ultraviolet ozone treatment for 30 min, and the PEDOT:PSS solution was spin-coated at 3000 rpm for 30 s, and then annealed at 150° C. for 10 min to form a hole transport layer.

[0081] the PbI 2 , CH 3 NH 3 I. DPP-2T was dissolved in DMF:DMSO (v / v 4:1) solvent according to the molar ratio (n:n-1:1, n=4), stirred at 60°C for 4 hours, and mixed to obtain perovskite Precursor solution, the concentration of the precursor solution is 0.4mol / L. in N 2 In an atmospheric glove box, 100 μL of the perovskite precursor solution was dropped on the hole transport layer and quickly spin-coated at 6000 rpm for 30 s to form a thin film, which was then annealed on a heating table at 80 °C ...

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Abstract

The invention relates to a two-dimensional perovskite material and a preparation method thereof, the molecular formula of the two-dimensional perovskite material is RAN-1BnX3n + 1, n = 1-4; wherein A is an organic cation, B is a metal cation, X is a halogen anion, the structural formula of R is as shown in the following formula (1), and R1 is a straight-chain or branched-chain alkyl group with the carbon atom number of 2-20; according to the two-dimensional perovskite material, a quantum well structure can be eliminated, the exciton binding energy is low, and the carrier transmission performance is high; the preparation method of the two-dimensional perovskite material is simple and controllable in preparation condition and suitable for industrial production. The invention further provides a solar cell, the material of a light absorption layer of the solar cell comprises the two-dimensional perovskite material, and the solar cell has high and stable photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a two-dimensional perovskite material, a preparation method thereof, and a solar cell. Background technique [0002] Organic-inorganic hybrid metal halide perovskite materials have attracted much attention due to their excellent optoelectronic properties, low raw material cost, and simple preparation process, but the stability of three-dimensional perovskite cells at this stage is poor. In contrast, two-dimensional perovskites have better stability and large-scale manufacturability. However, due to the quantum well characteristics of 2D perovskite materials, it has a large exciton binding energy, and the carrier mobility of 2D perovskite materials is low, which makes the photoelectric conversion efficiency of 2D perovskite devices. lower than conventional three-dimensional perovskite solar cells. To improve the photovoltaic efficiency of 2D perovskite solar cells, many team...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C07D487/04H01L51/46H01L51/48
CPCC07D487/04H10K71/12H10K85/655H10K85/6572Y02E10/549
Inventor葛子义刘畅
OwnerNINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI