Unlock instant, AI-driven research and patent intelligence for your innovation.

Hybrid NVME SSD storage system based on MRAM main memory

A storage system and hybrid technology, applied in the storage field, can solve the problems of high error rate of 3DTLCNAND, loss of FTL mapping table, and inability of SSD to be recognized by the system, so as to avoid consistency problems, reduce usage requirements, and improve I/O performance. Effect

Pending Publication Date: 2022-07-29
SHANDONG SINOCHIP SEMICON
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] NAND FLASH is used as the non-volatile memory in the current NVME SSD, but when NAND FLASH is applied, it is necessary to complete the development of SSD software code in combination with its usage restrictions
At the same time, due to the high error rate of 3D TLC NAND, BCH cannot solve it, so LDPC must be used
In addition, if an abnormal power failure occurs when the SSD is reading, writing, deleting, etc., it may cause the FTL mapping table to be lost because it is too late to update, resulting in a failure that the SSD cannot be recognized by the system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hybrid NVME SSD storage system based on MRAM main memory
  • Hybrid NVME SSD storage system based on MRAM main memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] This embodiment discloses a hybrid NVME SSD storage system based on MRAM main memory, which improves the random performance and reliability of the NVME SSD controller in a targeted manner and ensures data security.

[0033] like figure 1 As shown, the system includes an upper application layer, a middle control layer and a bottom storage layer.

[0034] The application layer includes n application I, 1 application II and PCIE interface I, where n is a positive integer. In this embodiment, application I is a common application, and the number of applications is unlimited, and application II is a high-performance and high-reliability application. Application II uses a shared cache HMB, which is separated from the cache area of ​​application I to ensure the cache atomicity of the application and avoid synchronization problems. Application I applies to the operating system on the host side to allocate a cache space with continuous logical addresses for the control layer t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a hybrid NVME SSD storage system based on an MRAM main memory, which comprises an application layer, a control layer and a storage layer, the application layer comprises n applications I, an application II and a PCIE interface I, n is a positive integer, the application II adopts a shared cache HMB, and the shared cache HMB is separated from a cache region of the application I; the control layer comprises n + 1 Name Space managers, a PCIE interface II, an NVME controller, an FTL mapping manager, a built-in SRAM (Static Random Access Memory), an NAND controller, a DRAM (Dynamic Random Access Memory) controller and an MRAM (Magnetic Random Access Memory) controller, the PCIE interface II is connected with the PCIE interface, the n + 1 Name Space managers respectively correspond to the n applications I and one application II, and the NVME controller is connected between the PCIE interface II and the n + 1 Name Space managers. According to the method, the advantages of the MRAM are combined, the random performance and reliability of the NVME SSD controller are improved in a targeted mode, and data safety is guaranteed.

Description

technical field [0001] The invention relates to the field of storage, in particular to a hybrid NVME SSD storage system based on MRAM main memory. Background technique [0002] NVME is a host controller interface specification for non-volatile memory. At present, it is widely used in the application layer protocol implemented by the PCIExpress bus to connect with the non-volatile storage medium. Compared with the maximum 32 sets of command queues provided by traditional SATA SSDs, NVME SSDs provide thousands of parallel queues to control IO data streams, which can greatly reduce latency and greatly improve the IOPS capability of SSDs. [0003] The current NVME SSD uses NAND FLASH as non-volatile memory, but when NAND FLASH flash memory is applied, it is necessary to complete the development of SSD software code in combination with its usage limitations. At the same time, because the error rate of 3D TLC NAND is too high, BCH cannot solve it, and LDPC must be used. In addi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/401G11C29/42
CPCG11C11/401G11C29/42
Inventor 刘奇浩沈力李瑞东
Owner SHANDONG SINOCHIP SEMICON