Method for forming semiconductor device

Abstract

The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source / drain (source / drain, S / D) contact structure and removing a top of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer, and spin-coating a dielectric layer over the air gap, the first spacer layer, and the second spacer layer to fill the recess and seal the air gap. The dielectric layer includes a raw material for spin-coating a dielectric material.

Description

technical field [0001] The present disclosure relates to a semiconductor device and a method of forming the same, and more particularly, to a method of forming a semiconductor device having an air-gap spacer formed using a spin-on dielectric material. Background technique [0002] As semiconductor technology advances, the need for higher storage capacity, faster processing systems, higher performance, and lower cost continues to increase. To meet these demands, the semiconductor industry continues to shrink the size of semiconductor devices, such as metal oxide semiconductor field effect transistors (MOSFETs), including planar MOSFETs and fin field effect transistors (fin field effect transistors, finFETs). This miniaturization increases the complexity of the semiconductor manufacturing process. SUMMARY OF THE INVENTION [0003] An embodiment of the present invention provides a method for forming a semiconductor device, comprising: forming an intermediate spacer structur...

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This miniaturization increases the complexity of the semiconductor manufacturing process

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