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Method capable of improving whole rod rate of heavily phosphorus-doped low resistor

A low-resistance, whole-rod rate technology, applied in chemical instruments and methods, self-molten liquid pulling method, final product manufacturing, etc., can solve the problems of compositional supercooling, low whole rod rate, affecting the normal growth of single crystals, etc.

Pending Publication Date: 2022-08-02
宁夏中欣晶圆半导体科技有限公司
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Problems solved by technology

Solve the phenomenon of constitutive overcooling in the crystal pulling process of the prior art due to the less and less silicon solution in the quartz crucible and the gradual increase of the quartz crucible, which affects the normal growth of single crystals and eventually leads to partial rod ratios. low problem

Method used

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  • Method capable of improving whole rod rate of heavily phosphorus-doped low resistor
  • Method capable of improving whole rod rate of heavily phosphorus-doped low resistor
  • Method capable of improving whole rod rate of heavily phosphorus-doped low resistor

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Embodiment Construction

[0029] In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following will briefly introduce the accompanying drawings used in the embodiments. Obviously, the drawings in the following description are some embodiments of the present invention, which are of great significance to the art For those of ordinary skill, other drawings can also be obtained from these drawings without any creative effort.

[0030] A method capable of improving the overall rod rate of heavily doped phosphorus and low resistance, comprising the steps of:

[0031] Split side heaters available: see Figure 1 to Figure 6 , the split side heater 100 includes a main heater 10 and an auxiliary heater 20, the main heater 10 and the auxiliary heater 20 are both cylindrical structures with openings at both ends, and both the main heater 10 and the auxiliary heater 20 include On the opposite top open end and bottom open end, the auxiliary heater 20 is locat...

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Abstract

The invention relates to a method capable of improving the whole rod rate of a heavily phosphorus-doped low resistor. The method comprises the following steps: providing a single crystal furnace; providing a split type heater arranged in the single crystal furnace; in the single crystal drawing process, the main heater and the auxiliary heater conduct heating at the preset proportional power. By adopting an up-and-down split structure of the main heater and the auxiliary heater and a method for heating at the preset proportional power, along with the gradual lifting of the crucible in the crystal pulling process, the radiation to the melt liquid level which is gradually lifted along with the crucible while being reduced is increased through the heating amount of the auxiliary heater; more importantly, radiation near a solid-liquid interface is improved, and melt convection is improved, so that diffusion of a doping agent in a silicon melt is increased, the phenomenon of component supercooling caused by segregation is avoided, a crystal growth interface becomes stable, single crystal growth is facilitated, and the whole rod rate of crystal pulling is increased.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon production equipment, in particular to a method capable of improving the overall rod rate of heavily doped phosphorus and low resistance. Background technique [0002] The single crystal furnace is a device that uses a heater to melt the silicon material and grow dislocation-free single crystals by the Czochralski method in an inert gas environment. In the process of drawing phosphorus-doped low-resistance crystal rods, the freezing point drops due to the addition of a large amount of dopants, resulting in the phenomenon of constitutive overcooling. When the actual temperature in the liquid at the front of the interface is a positive gradient, a circular subcooling zone can be formed. This supercooling related to the concentration of solute in the liquid is called compositional supercooling, and its degree of subcooling is called "component supercooling". . To produce "component ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14C30B15/20C30B29/06
CPCC30B15/14C30B15/20C30B29/06Y02P70/50
Inventor 伊冉徐慶晧王黎光闫龙
Owner 宁夏中欣晶圆半导体科技有限公司
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